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Infineon IRF8313TRPBF
| Manufacturer | |
| MPN | IRF8313TRPBF |
| LCSC Part # | C94066 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 30V 9.7A SO-8 |
| Datasheet |  Infineon IRF8313TRPBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 9.7A | |
| Gate Threshold Voltage (Vgs(th)) | 2.35V | |
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 87pF | |
| RDS(on) | 15.5mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 760pF | |
| Gate Charge(Qg) | 6nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 9.7A | |
| Gate Threshold Voltage (Vgs(th)) | 2.35V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 87pF | |
| RDS(on) | 15.5mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 760pF | |
| Gate Charge(Qg) | 6nC |
Introduction
HEXFET Power MOSFET The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.
Features
- Low Gate Charge and Low Rps(on)
- Fully Characterized Avalanche Voltage and Current
- 20V VGS Max. Gate Rating
- 100% Tested for RG
- Lead-Free (Qualified to 260°C Reflow)
- RoHS Compliant (Halogen Free)
Applications
- Load Switch
- DC/DC Conversion
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4657 | $ 0.47 |
| 10+ | $ 0.3635 | $ 3.64 |
| 30+ | $ 0.3197 | $ 9.59 |
| 100+ | $ 0.2645 | $ 26.45 |
| 500+ | $ 0.2402 | $ 120.10 |
| 1,000+ | $ 0.2256 | $ 225.60 |
Standard Packaging4000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 9.7A | |
| Gate Threshold Voltage (Vgs(th)) | 2.35V | |
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 87pF | |
| RDS(on) | 15.5mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 760pF | |
| Gate Charge(Qg) | 6nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 9.7A | |
| Gate Threshold Voltage (Vgs(th)) | 2.35V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 87pF | |
| RDS(on) | 15.5mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 760pF | |
| Gate Charge(Qg) | 6nC |
Introduction
HEXFET Power MOSFET The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.
Features
- Low Gate Charge and Low Rps(on)
- Fully Characterized Avalanche Voltage and Current
- 20V VGS Max. Gate Rating
- 100% Tested for RG
- Lead-Free (Qualified to 260°C Reflow)
- RoHS Compliant (Halogen Free)
Applications
- Load Switch
- DC/DC Conversion
C94066 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| DO4818 | DOINGTER | SOP-8 | 2,015 | $ 0.0943 | ||
| VBA3310 | VBsemi Elec | SO-8 | 379 | $0.4821 $0.5671 | ||
| WSP4888 | Winsok Semicon | SOP-8 | 2,930 | $0.2134 $0.2371 | ||
| AO4832 | AOS | SOIC-8 | 1,470 | $ 0.3482 | ||
| MOT4406S | MOT | SOP-8 | 800 | $0.0727 $0.0807 | ||
| HXY4832S | HXY MOSFET | SOP-8 | 645 | $0.1383 $0.1455 | ||
| DMG4800LSD-13-HXY | HXY MOSFET | SOP-8 | 500 | $0.2446 $0.2877 | ||
| FDS6982AS-HXY | HXY MOSFET | SOP-8 | 170 | $0.2795 $0.3288 | ||
| DMG4800LSDQ-13-HXY | HXY MOSFET | SOP-8 | 135 | $0.2805 $0.3506 | ||
| SI4904DY-T1-E3-VB | VBsemi Elec | SO-8 | 0 | $0.7165 $0.7542 |