onsemi NTBLS002N08MC
| Manufacturer | |
| MPN | NTBLS002N08MC |
| LCSC Part # | C903209 |
| Packaging | MO-299A |
| Customer # | |
| Key Attributes | 80V 238A 3V 208W 1.7mΩ@10V 1 N-channel MO-299A Single FETs, MOSFETs RoHS |
| Datasheet |  onsemi NTBLS002N08MC |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 7 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | MO-299A | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 238A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 208W | |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF | |
| RDS(on) | 1.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.58nF | |
| Gate Charge(Qg) | 92nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | MO-299A | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 238A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 208W | |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF | |
| RDS(on) | 1.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.58nF | |
| Gate Charge(Qg) | 92nC@10V |
Introduction
These N-channel enhancement-mode FETs are manufactured using a proprietary high cell density DMOS technology. These devices are designed to minimize on-resistance while providing rugged, reliable, and fast switching performance. They are suitable for most applications requiring up to 500mA of continuous drain current. These devices are particularly well-suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
- Low on-resistance RDS(on) for minimized conduction losses
- Low gate charge QG and capacitance for minimized drive losses
- Reduced switching noise/EMI
- Lead-free, halogen-free/bromine-free flame retardant, RoHS compliant
Applications
- Power tools, battery-powered vacuum cleaners
- Drones, material handling
- Battery management systems/energy storage, home automation
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 6.4845 | $ 6.48 |
| 10+ | $ 5.596 | $ 55.96 |
| 30+ | $ 5.0531 | $ 151.59 |
| 100+ | $ 4.5996 | $ 459.96 |
Standard Packaging2000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | MO-299A | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 238A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 208W | |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF | |
| RDS(on) | 1.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.58nF | |
| Gate Charge(Qg) | 92nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | MO-299A | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 238A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 208W | |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF | |
| RDS(on) | 1.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.58nF | |
| Gate Charge(Qg) | 92nC@10V |
Introduction
These N-channel enhancement-mode FETs are manufactured using a proprietary high cell density DMOS technology. These devices are designed to minimize on-resistance while providing rugged, reliable, and fast switching performance. They are suitable for most applications requiring up to 500mA of continuous drain current. These devices are particularly well-suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
- Low on-resistance RDS(on) for minimized conduction losses
- Low gate charge QG and capacitance for minimized drive losses
- Reduced switching noise/EMI
- Lead-free, halogen-free/bromine-free flame retardant, RoHS compliant
Applications
- Power tools, battery-powered vacuum cleaners
- Drones, material handling
- Battery management systems/energy storage, home automation
C903209 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| HSBL020N08 | HUASHUO | TOLL | 8 | $ 1.1313 | ||
| NTBLS1D5N08MC | onsemi | MO-299A | 10 | $ 13.0826 | ||
| FDBL86063-F085 | onsemi | MO-299A | 27 | $ 11.915 | ||
| FDBL0210N80 | onsemi | MO-299A | 400 | $ 5.5014 | ||
| NTBLS1D1N08H | onsemi | MO-299A | 5 | $ 17.1382 | ||
| NVBLS1D1N08H | onsemi | MO-299A | 0 | $ 6.321 | ||
| FDBL86363-F085 | onsemi | MO-299A | 0 | $ 2.6227 |