onsemi NVMFS6H818NWFT1G
| Manufacturer | |
| MPN | NVMFS6H818NWFT1G |
| LCSC Part # | C900469 |
| Packaging | DFN-5(5.9x4.9) |
| Customer # | |
| Key Attributes | MOSFET N-CH 80V 123A DFN-5(5.9x4.9) |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | DFN-5(5.9x4.9) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 123A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 3.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.1nF | |
| Gate Charge(Qg) | 46nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | DFN-5(5.9x4.9) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 123A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 3.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.1nF | |
| Gate Charge(Qg) | 46nC@10V |
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Features
AI Translation
- Small Footprint <5x6 mm> for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- NVMFS6H818NWF − Wettable Flank Option for Enhanced Optical Inspection
- AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free and are RoHS Compliant
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.1388 | $ 3.14 |
| 10+ | $ 3.0917 | $ 30.92 |
| 30+ | $ 3.0608 | $ 91.82 |
| 100+ | $ 3.03 | $ 303.00 |
Standard Packaging1500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | DFN-5(5.9x4.9) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 123A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 3.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.1nF | |
| Gate Charge(Qg) | 46nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | DFN-5(5.9x4.9) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 123A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 3.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.1nF | |
| Gate Charge(Qg) | 46nC@10V |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Small Footprint <5x6 mm> for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- NVMFS6H818NWF − Wettable Flank Option for Enhanced Optical Inspection
- AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free and are RoHS Compliant
C900469 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



