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onsemi NVMFD5C470NWFT1G
| Manufacturer | |
| MPN | NVMFD5C470NWFT1G |
| LCSC Part # | C900391 |
| Packaging | DFN-8(4.9x5.9) |
| Customer # | |
| Key Attributes | 40V 36A 9.75mΩ@10V 28W 3.5V 2 N-Channel DFN-8(4.9x5.9) FET, MOSFET Arrays RoHS |
| Datasheet |  onsemi NVMFD5C470NWFT1G |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | DFN-8(4.9x5.9) | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 36A | |
| RDS(on) | 9.75mΩ@10V | |
| Pd - Power Dissipation | 28W | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 420pF | |
| Gate Charge(Qg) | 8nC@10V | |
| Operating Temperature | -55℃~+175℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | DFN-8(4.9x5.9) | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 36A | |
| RDS(on) | 9.75mΩ@10V | |
| Pd - Power Dissipation | 28W |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 420pF | |
| Gate Charge(Qg) | 8nC@10V | |
| Operating Temperature | -55℃~+175℃ |
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Introduction
AI Translation
This N-channel MOSFET is manufactured using ON Semiconductor's advanced MOSFET process, which integrates shielded gate technology. The process is optimized to minimize on-resistance while maintaining superior switching performance through a best-in-class soft body diode.
Features
AI Translation
- Small package (5x6 mm), suitable for compact designs
- Low on-resistance RDS(on) to minimize conduction losses
- Low gate charge QG and capacitance to minimize driving losses
- NVMFD5C470NWF - solderable flank option for optical inspection
- AEC-Q101 qualified, PPAP documentation available
- Lead-free, RoHS compliant
Applications
AI Translation
- Primary DC-DC MOSFET - Synchronous rectifier in DC-DC and AC-DC - Motor drive
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.4976 | $ 1.50 |
| 10+ | $ 1.2447 | $ 12.45 |
| 30+ | $ 1.1067 | $ 33.20 |
| 100+ | $ 0.9504 | $ 95.04 |
| 500+ | $ 0.8799 | $ 439.95 |
| 1,500+ | $ 0.8492 | $ 1273.80 |
Standard Packaging1500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | DFN-8(4.9x5.9) | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 36A | |
| RDS(on) | 9.75mΩ@10V | |
| Pd - Power Dissipation | 28W | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 420pF | |
| Gate Charge(Qg) | 8nC@10V | |
| Operating Temperature | -55℃~+175℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | DFN-8(4.9x5.9) | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 36A | |
| RDS(on) | 9.75mΩ@10V | |
| Pd - Power Dissipation | 28W |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 420pF | |
| Gate Charge(Qg) | 8nC@10V | |
| Operating Temperature | -55℃~+175℃ |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET is manufactured using ON Semiconductor's advanced MOSFET process, which integrates shielded gate technology. The process is optimized to minimize on-resistance while maintaining superior switching performance through a best-in-class soft body diode.
Features
AI Translation
- Small package (5x6 mm), suitable for compact designs
- Low on-resistance RDS(on) to minimize conduction losses
- Low gate charge QG and capacitance to minimize driving losses
- NVMFD5C470NWF - solderable flank option for optical inspection
- AEC-Q101 qualified, PPAP documentation available
- Lead-free, RoHS compliant
Applications
AI Translation
- Primary DC-DC MOSFET - Synchronous rectifier in DC-DC and AC-DC - Motor drive
C900391 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| NVMFD5C470NT1G | onsemi | DFN-8(5x6) | 84 | $ 2.1738 | ||
| S60J04F | HL | PDFN-8L(5x6) | 4,895 | $ 0.1933 | ||
| NVMFD5C466NWFT1G | onsemi | DFN-8(4.9x5.9) | 481 | $ 0.8874 | ||
| NVMFD5C462NT1G | onsemi | DFN-8(5x6) | 370 | $ 1.7818 | ||
| DMTH45M5SPDWQ-13 | DIODES | PowerDI5060-8 | 29 | $ 3.3825 | ||
| AGM406MNA | AGMSEMI | PDFN-8(5x6) | 115 | $ 0.2777 | ||
| NVMFD5C470NLT1G | onsemi | DFN-8(5x6) | 0 | $ 1.9837 | ||
| NTMFD5C466NT1G | onsemi | DFN-8(4.9x5.9) | 0 | $ 0.9 | ||
| NVMFD5C462NWFT1G | onsemi | DFN-8(4.9x5.9) | 0 | $ 1.9647 | ||
| SQJ264EP-T1_GE3 | VISHAY | PowerPAK-SO-8-Dual | 0 | $ 0.9459 |