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onsemi CNY17F4SR2VM
| Manufacturer | |
| MPN | CNY17F4SR2VM |
| LCSC Part # | C899106 |
| Packaging | SMD-6P |
| Customer # | |
| Key Attributes | 6-Pin DIP High BvcEO Phototransistor Optocouplers |
| Datasheet |  onsemi CNY17F4SR2VM |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Manufacturer | onsemi | |
| Packaging | SMD-6P | |
| Fall time | 3.5us | |
| Output Current | 50mA | |
| Rise time | 4us | |
| Vce Saturation(VCE(sat)) | 400mV@2.5mA,10mA | |
| Load Voltage | 70V | |
| Reverse Voltage | 6V | |
| Current transfer ratio | 160%;320% | |
| Voltage - Forward(Vf) | 1.15V | |
| Forward Current(If) | 60mA | |
| Number of Channels | 1 | |
| Total Power Dissipation(Pd) | 270mW | |
| Output Type | Phototransistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 4.17kV | |
| Features | - |
| Type | Description | |
|---|---|---|
| Category | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Manufacturer | onsemi | |
| Packaging | SMD-6P | |
| Fall time | 3.5us | |
| Output Current | 50mA | |
| Rise time | 4us | |
| Vce Saturation(VCE(sat)) | 400mV@2.5mA,10mA | |
| Load Voltage | 70V | |
| Reverse Voltage | 6V |
| Type | Description | |
|---|---|---|
| Current transfer ratio | 160%;320% | |
| Voltage - Forward(Vf) | 1.15V | |
| Forward Current(If) | 60mA | |
| Number of Channels | 1 | |
| Total Power Dissipation(Pd) | 270mW | |
| Output Type | Phototransistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 4.17kV | |
| Features | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in−line package.
Features
AI Translation
- High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)
- Closely Matched Current Transfer Ratio (CTR) Minimizes Unit−to−Unit Variation
- Current Transfer Ratio In Select Groups
- Very Low Coupled Capacitance Along With No Chip−to−Pin 6 Base Connection for Minimum Noise Susceptibility (CNY17FXM, MOC8106M)
- Safety and Regulatory Approvals: UL1577, 4,170 VACRMS for 1 Minute, DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage
Applications
AI Translation
- Power Supply Regulators
- Digital Logic Inputs
- Microprocessor Inputs
- Appliance Sensor Systems
- Industrial Controls
In-Stock: 35
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.5411 | $ 1.54 |
| 10+ | $ 1.2858 | $ 12.86 |
| 30+ | $ 1.147 | $ 34.41 |
| 100+ | $ 0.9875 | $ 98.75 |
| 500+ | $ 0.9173 | $ 458.65 |
| 1,000+ | $ 0.887 | $ 887.00 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Manufacturer | onsemi | |
| Packaging | SMD-6P | |
| Fall time | 3.5us | |
| Output Current | 50mA | |
| Rise time | 4us | |
| Vce Saturation(VCE(sat)) | 400mV@2.5mA,10mA | |
| Load Voltage | 70V | |
| Reverse Voltage | 6V | |
| Current transfer ratio | 160%;320% | |
| Voltage - Forward(Vf) | 1.15V | |
| Forward Current(If) | 60mA | |
| Number of Channels | 1 | |
| Total Power Dissipation(Pd) | 270mW | |
| Output Type | Phototransistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 4.17kV | |
| Features | - |
| Type | Description | |
|---|---|---|
| Category | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Manufacturer | onsemi | |
| Packaging | SMD-6P | |
| Fall time | 3.5us | |
| Output Current | 50mA | |
| Rise time | 4us | |
| Vce Saturation(VCE(sat)) | 400mV@2.5mA,10mA | |
| Load Voltage | 70V | |
| Reverse Voltage | 6V |
| Type | Description | |
|---|---|---|
| Current transfer ratio | 160%;320% | |
| Voltage - Forward(Vf) | 1.15V | |
| Forward Current(If) | 60mA | |
| Number of Channels | 1 | |
| Total Power Dissipation(Pd) | 270mW | |
| Output Type | Phototransistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 4.17kV | |
| Features | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in−line package.
Features
AI Translation
- High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)
- Closely Matched Current Transfer Ratio (CTR) Minimizes Unit−to−Unit Variation
- Current Transfer Ratio In Select Groups
- Very Low Coupled Capacitance Along With No Chip−to−Pin 6 Base Connection for Minimum Noise Susceptibility (CNY17FXM, MOC8106M)
- Safety and Regulatory Approvals: UL1577, 4,170 VACRMS for 1 Minute, DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage
Applications
AI Translation
- Power Supply Regulators
- Digital Logic Inputs
- Microprocessor Inputs
- Appliance Sensor Systems
- Industrial Controls
C899106 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| Type | Details |
|---|---|
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |