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onsemi FDP150N10

Manufacturer
MPN
FDP150N10
LCSC Part #
C898589
Packaging
TO-220
Customer #
Key Attributes
100V 57A 4.5V 110W 1 N-channel TO-220 Single FETs, MOSFETs RoHS
Datasheetpdf icononsemi FDP150N10
RoHS Compliance4 documents available
Alternative Parts10
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QtyUnit Price(Reference Only)Total Amount
1+$ 3.1941$ 3.19
10+$ 2.8513$ 28.51
50+$ 2.6368$ 131.84
100+$ 2.4175$ 241.75
500+$ 2.3184$ 1159.20
800+$ 2.2745$ 1819.60
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingTO-220
Operating Temperature-55℃~+150℃
Drain to Source Voltage100V
Current - Continuous Drain(Id)57A
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)4.76nF
Gate Charge(Qg)69nC@10V

Introduction

AI Translation

This N-channel MOSFET is manufactured using the advanced PowerTrench® process, which is specifically tailored to minimize on-resistance while maintaining superior switching performance.

Features

AI Translation
  • RDS(on) = 12 mΩ (typical) @ VGS = 10 V, ID = 49 A
  • Fast switching speed
  • Low gate charge
  • High-performance trench technology for ultra-low RDS(on)
  • High power and high current handling capability
  • RoHS compliant

Applications

AI Translation
  • Synchronous rectification for ATX/server/communication PSU
  • Battery protection circuits
  • Motor drives and UPS
  • Micro photovoltaic inverters

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
SP010N13GTQSiliupTO-220-3L820$ 0.3682
RS150N160TREASUNOSTO-22050$1.4401 $1.5158
CMP063N15ACmosTO-220190$1.3527 $1.4238
AGM15T06C-BAGMSEMITO-22078$1.3669 $1.4857
IPP076N15N5AKSA1InfineonTO-220-310$ 3.6357
IXTP94N20X4Littelfuse/IXYSTO-2203$ 14.9656
STP100N10F7STTO-220698$ 1.3808
P1010ATNIKO-SEMTO-2200$ 1.3859
VBM1152NVBsemi ElecTO-220AB0$ 3.125
CMP200N25CmosTO-2200$1.9706 $2.0743