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onsemi SZESD7551MXWT5GRoHS

제조업체
제조사 품번
SZESD7551MXWT5G
LCSC 번호
C896561
포장
X-DFN-2
고객 번호
주요 제원
13V 6V Bidirectional 3.3V X-DFN-2 TVS Diodes RoHS
데이터시트pdf icononsemi SZESD7551MXWT5G
품절
재입고 알림
최소값: 5배수: 5판매 단위: Piece
BOM 목록에 추가
수량단가(참고용)총액
5+$ 0.0826$ 0.41
50+$ 0.0815$ 4.08
150+$ 0.0807$ 12.11
500+$ 0.08$ 40.00
표준 패키지8000/Full Reel
수량이 많을수록 더 좋은 가격?
$

제품 사양

전체
타입설명
카테고리Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes
제조업체onsemi
포장X-DFN-2
Clamping Voltage13V
Operating Temperature-55℃~+150℃
Voltage - Breakdown6V
typeESD
Reverse Leakage Current (Ir)50nA
PolarityBidirectional
Reverse Stand-Off Voltage (Vrwm)3.3V

개요

AI 번역

The ESD7551 is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, the part is well suited for use in high frequency designs such as USB 2.0 high speed and antenna line applications.

주요 특징

AI 번역
  • Ultra−Low Capacitance (0.35 pF Max)
  • Low Clamping Voltage
  • Stand−off Voltage: 3.3 V
  • Low Leakage
  • Response Time is <1 ns
  • Low Dynamic Resistance <1 Ω
  • Protection for the Following Standards: IEC 61000−4−2 (Level 4) & ISO 10605
  • SZESD7551MXWT5G - Wettable Flank Package for Optimal Automated Optical Inspection (AOI)
  • SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

응용 분야

AI 번역
  • RF Signal ESD Protection
  • RF Switching, PA, and Antenna ESD Protection
  • Near Field Communications