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onsemi MBRAF260T3GRoHS

Manufacturer
onsemi
MPN
MBRAF260T3G
LCSC Part #
C895499
Packaging
SMA-FL
Customer #
Key Attributes
DIODE SCHOTTKY 60V SMA-FL
Datasheetpdf icononsemi MBRAF260T3G
In-Stock: 34
34 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.7425$ 0.74
10+$ 0.6109$ 6.11
30+$ 0.5459$ 16.38
100+$ 0.4826$ 48.26
500+$ 0.4436$ 221.80
1,000+$ 0.4241$ 424.10
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
Manufactureronsemi
PackagingSMA-FL
Operating Junction Temperature Range-55℃~+150℃
Voltage - DC Reverse (Vr) (Max)60V
Diode Configuration1 Independent
Voltage - Forward(Vf@If)630mV@2A
Reverse Leakage Current (Ir)200uA@60V
Non-Repetitive Peak Forward Surge Current60A
Current - Rectified2A
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Introduction

AI Translation

This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.

Features

AI Translation
  • Low Profile Package for Space Constrained Applications
  • Rectangular Package for Automated Handling
  • Highly Stable Oxide Passivated Junction
  • 150℃ Operating Junction Temperature
  • Guard-Ring for Stress Protection
  • NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These are Pb-Free and Halide-Free Devices