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onsemi NSBC124XDXV6T1G
| Manufacturer | |
| MPN | NSBC124XDXV6T1G |
| LCSC Part # | C895109 |
| Packaging | SOT-563 |
| Customer # | |
| Key Attributes | 80 500mW 100mA 50V 2 NPN (Pre-Biased) SOT-563 Bipolar Transistor Arrays, Pre-Biased RoHS |
| Datasheet |  onsemi NSBC124XDXV6T1G |
| RoHS Compliance | 4 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SOT-563 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,1mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 0.56 | |
| Pd - Power Dissipation | 500mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SOT-563 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,1mA | |
| Output Voltage(VO(on)) | - |
| Type | Description | |
|---|---|---|
| Input Resistor | 22kΩ | |
| Resistor Ratio | 0.56 | |
| Pd - Power Dissipation | 500mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This series of digital transistors is designed to replace individual devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors — a base series resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using a BRT reduces system cost and saves board space.
Features
AI Translation
- Simplified circuit design
- Board space savings
- Reduced component count
- S and NSV prefixes for automotive and other applications with unique sourcing and control change requirements; AEC-Q101 qualified and PPAP capable
- These devices are Pb-free, halogen-free/BFR-free, and RoHS compliant
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.1368 | $ 0.14 |
| 200+ | $ 0.053 | $ 10.60 |
| 500+ | $ 0.0511 | $ 25.55 |
| 1,000+ | $ 0.0502 | $ 50.20 |
Standard Packaging4000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SOT-563 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,1mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 0.56 | |
| Pd - Power Dissipation | 500mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SOT-563 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,1mA | |
| Output Voltage(VO(on)) | - |
| Type | Description | |
|---|---|---|
| Input Resistor | 22kΩ | |
| Resistor Ratio | 0.56 | |
| Pd - Power Dissipation | 500mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This series of digital transistors is designed to replace individual devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors — a base series resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using a BRT reduces system cost and saves board space.
Features
AI Translation
- Simplified circuit design
- Board space savings
- Reduced component count
- S and NSV prefixes for automotive and other applications with unique sourcing and control change requirements; AEC-Q101 qualified and PPAP capable
- These devices are Pb-free, halogen-free/BFR-free, and RoHS compliant
C895109 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |