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onsemi NSVMUN5212DW1T1G product image
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onsemi NSVMUN5212DW1T1GRoHS

Manufacturer
onsemi
MPN
NSVMUN5212DW1T1G
LCSC Part #
C893971
Packaging
SOT-363
Customer #
Key Attributes
60 250mW 100mA 50V 2 NPN (Pre-Biased) SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS
Datasheetpdf icononsemi NSVMUN5212DW1T1G
In-Stock: 11,990
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QtyUnit PriceTotal Amount
1+$ 0.3806$ 0.38
10+$ 0.2944$ 2.94
30+$ 0.2586$ 7.76
100+$ 0.2131$ 21.31
500+$ 0.1919$ 95.95
1,000+$ 0.1805$ 180.50
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased
Manufactureronsemi
PackagingSOT-363
Current - Collector Cutoff100nA
Transition frequency(fT)-
Emitter-Base Voltage VEBO-
DC Current Gain60
Vce Saturation(VCE(sat))250mV@10mA,0.3mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))-
Input Resistor22kΩ
Resistor Ratio1
Pd - Power Dissipation250mW
Voltage - Input(Max)(VI(off))-
Input Voltage (VI(on)@Ic,Vce)1.9V@5mA,200mV
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
typeNPN
Number2 NPN (Pre-Biased)
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Introduction

AI Translation

This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and board space.

Features

AI Translation
  • Simplified circuit design
  • Reduced board space
  • Reduced component count
  • S and NSV prefixes for automotive and other applications requiring unique origin and change control requirements; AEC-Q101 compliant with PPAP capability
  • These devices are lead-free, halogen-free/BFR-free, and RoHS compliant