Images for reference only
EDA ModelsEasyEDA
onsemi MUN5112DW1T1G
| Manufacturer | |
| MPN | MUN5112DW1T1G |
| LCSC Part # | C891805 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | 60 250mW 100mA 50V 2 PNP Pre-Biased Transistors SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS |
| Datasheet |  onsemi MUN5112DW1T1G |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 60 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 28.6kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@5mA,200mV | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 60 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - |
| Type | Description | |
|---|---|---|
| Input Resistor | 28.6kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@5mA,200mV | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) integrates a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and minimizes board space.
Features
AI Translation
- S and NSV prefixes for automotive and other applications requiring unique place of origin and change control requirements; AEC-Q101 compliant with PPAP capability
- Simplified circuit design
- Reduced board space
- Reduced component count
- Lead-free, halogen-free/BFR-free, and RoHS compliant
In-Stock: 13
13 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4419 | $ 0.44 |
| 10+ | $ 0.4354 | $ 4.35 |
| 30+ | $ 0.4306 | $ 12.92 |
| 100+ | $ 0.4273 | $ 42.73 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 60 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 28.6kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@5mA,200mV | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 60 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - |
| Type | Description | |
|---|---|---|
| Input Resistor | 28.6kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@5mA,200mV | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) integrates a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and minimizes board space.
Features
AI Translation
- S and NSV prefixes for automotive and other applications requiring unique place of origin and change control requirements; AEC-Q101 compliant with PPAP capability
- Simplified circuit design
- Reduced board space
- Reduced component count
- Lead-free, halogen-free/BFR-free, and RoHS compliant
C891805 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| MUN5113DW1T1G | onsemi | SOT-363 | 410 | $ 0.1167 | ||
| SMUN5113DW1T1G | onsemi | SOT-363 | 45 | $ 0.4354 | ||
| NSVMUN5111DW1T3G | onsemi | SOT-363 | 9,575 | $ 0.056 | ||
| MUN5111DW1T1G | onsemi | SOT-363 | 1,005 | $ 0.2338 | ||
| PUMB1,115 | Nexperia | SOT-363 | 0 | $ 0.1609 | ||
| MUN5130DW1T1G | onsemi | SOT-363 | 0 | $ 0.0861 | ||
| RN2902,LF(CT | TOSHIBA | TSSOP-6(SC-88)SOT-363 | 0 | $ 0.073 | ||
| PUMB1,135 | Nexperia | SOT-363 | 0 | $ 0.0162 | ||
| RN2901,LXHF(CT | TOSHIBA | TSSOP-6(SC-88)SOT-363 | 0 | $ 0.1368 | ||
| RN2901,LF(CT | TOSHIBA | TSSOP-6(SC-88)SOT-363 | 0 | $ 0.0812 |