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onsemi FDWS86380-F085RoHS

Manufacturer
MPN
FDWS86380-F085
LCSC Part #
C891133
Packaging
Power-56
Customer #
Key Attributes
80V 50A 4V 75W 11.3mΩ@10V 1 N-channel Power-56 Single FETs, MOSFETs RoHS
Datasheetpdf icononsemi FDWS86380-F085
Alternative Parts10
In-Stock: 7
7 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 2.3054$ 2.31
10+$ 2.2696$ 22.70
30+$ 2.2469$ 67.41
100+$ 2.2225$ 222.25
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingPower-56
Operating Temperature-55℃~+175℃
Drain to Source Voltage80V
Current - Continuous Drain(Id)50A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)11.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.44nF
Gate Charge(Qg)-

Introduction

AI Translation

This power MOSFET is fabricated using a trench process, specifically designed to reduce gate charge and on-resistance. The device is suitable for applications requiring low gate charge drive or low on-resistance.

Features

AI Translation
  • Typical R DS(on) = 11.3 mΩ at V GS = 10 V, I D = 50 A
  • Typical Q g(tot) = 20 nC at V GS = 10 V, I D = 50 A
  • Single-pulse avalanche rated
  • RoHS compliant
  • AEC Q101 qualified
  • Solderable flanks for AOI

Applications

AI Translation
  • Automotive engine control
  • Powertrain management
  • Solenoid and motor drivers
  • Electronic steering systems
  • Integrated starter-generator
  • Distributed power architecture and VRM
  • 12V system main switch

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