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onsemi FDN5632N-F085 product image
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onsemi FDN5632N-F085RoHS

Manufacturer
onsemi
MPN
FDN5632N-F085
LCSC Part #
C891117
Packaging
SOT-23-3
Customer #
Key Attributes
MOSFET N-CH 60V 1.7A SOT-23-3
Datasheetpdf icononsemi FDN5632N-F085
In-Stock: 2,461
2,461 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.6142$ 0.6020$ 0.60
10+$ 0.4901$ 0.4803$ 4.80
30+$ 0.4272$ 0.4187$ 12.56
100+$ 0.366$ 0.3587$ 35.87
500+$ 0.3289$ 0.3224$ 161.20
1,000+$ 0.3095$ 0.3034$ 303.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSOT-23-3
Drain to Source Voltage60V
Current - Continuous Drain(Id)1.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.1W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)98mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)475pF
Gate Charge(Qg)-
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This N-channel PowerTrench MOSFET is manufactured using Fairchild's advanced PowerTrench process, which is specially optimized to minimize on-resistance while maintaining low gate charge for superior switching performance.

Features

AI Translation
  • RDS(on) = 98 mΩ at VGS = 4.5 V, ID = 1.6 A
  • RDS(on) = 82 mΩ at VGS = 10 V, ID = 1.7 A
  • Typical Qg(total) = 9.2 nC at VGS = 10 V
  • Low Miller charge
  • Unclamped inductive switching capability
  • AEC Q101 qualified
  • RoHS compliant

Applications

AI Translation
  • DC-DC converters
  • Motor drivers