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onsemi FDMC8327LRoHS

Manufacturer
MPN
FDMC8327L
LCSC Part #
C890957
Packaging
Power33-8
Customer #
Key Attributes
N-Channel PowerTrench MOSFET
Datasheetpdf icononsemi FDMC8327L
In-Stock: 2,492
2,492 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.6683$ 0.67
10+$ 0.5334$ 5.33
30+$ 0.4667$ 14.00
100+$ 0.4001$ 40.01
500+$ 0.361$ 180.50
1,000+$ 0.3399$ 339.90
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingPower33-8
Operating Temperature-55℃~+150℃
Drain to Source Voltage40V
Current - Continuous Drain(Id)43A
Output Capacitance(Coss)347pF
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)7.4mΩ@10V;9.4mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.235nF
Gate Charge(Qg)18.5nC@10V
TypeN-Channel

Introduction

AI Translation

This N-Channel MOSFET is produced using advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

AI Translation
  • Max rDS(on)=9.7 mΩ at VGS=10 V, ID=12 A
  • Max rDS(on)=12.5 mΩ at VGS=4.5 V, ID=10 A
  • Low Profile - 0.8 mm max in Power 33
  • 100% UIL test
  • RoHS Compliant

Applications

AI Translation
  • DC-DC Conversion
  • MLP 3.3x3.3