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EDA ModelsEasyEDA
onsemi FDMA507PZ
| Manufacturer | |
| MPN | FDMA507PZ |
| LCSC Part # | C890900 |
| Packaging | VDFN-6(2x2) |
| Customer # | |
| Key Attributes | 20V 7.8A 1.5V 2.4W 24mΩ@5V 1 P-Channel VDFN-6(2x2) Single FETs, MOSFETs RoHS |
| Datasheet |  onsemi FDMA507PZ |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | VDFN-6(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 7.8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 2.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF | |
| RDS(on) | 24mΩ@5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 15pF | |
| Gate Charge(Qg) | 30nC@5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | VDFN-6(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 7.8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF | |
| RDS(on) | 24mΩ@5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 15pF | |
| Gate Charge(Qg) | 30nC@5V |
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Introduction
AI Translation
This device is designed for battery charging or load switching in cellular phones and other ultra-portable applications. It incorporates MOSFETs with low on-resistance. The MicroFET 2X2 package offers excellent thermal performance for its physical size, making it ideal for linear mode applications.
Features
AI Translation
- Max rDS(on) = 24 mΩ at VGS = -5 V, ID = -7.8 A
- Max rDS(on) = 25 mΩ at VGS = -4.5 V, ID = -7 A
- Max rDS(on) = 35 mΩ at VGS = -2.5 V, ID = -5.5 A
- Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -4 A
- MicroFET 2×2 mm package, low profile — 0.8 mm max
- Typical HBM ESD protection level >3.2 kV
- Halogen-free and antimony oxide-free
- RoHS compliant
Applications
AI Translation
- Cellular phones
- Other ultra-portable applications
- Linear mode applications
In-Stock: 39
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.6954 | $ 0.70 |
| 10+ | $ 0.684 | $ 6.84 |
| 30+ | $ 0.6775 | $ 20.33 |
| 100+ | $ 0.6694 | $ 66.94 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | VDFN-6(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 7.8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 2.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF | |
| RDS(on) | 24mΩ@5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 15pF | |
| Gate Charge(Qg) | 30nC@5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | VDFN-6(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 7.8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF | |
| RDS(on) | 24mΩ@5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 15pF | |
| Gate Charge(Qg) | 30nC@5V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This device is designed for battery charging or load switching in cellular phones and other ultra-portable applications. It incorporates MOSFETs with low on-resistance. The MicroFET 2X2 package offers excellent thermal performance for its physical size, making it ideal for linear mode applications.
Features
AI Translation
- Max rDS(on) = 24 mΩ at VGS = -5 V, ID = -7.8 A
- Max rDS(on) = 25 mΩ at VGS = -4.5 V, ID = -7 A
- Max rDS(on) = 35 mΩ at VGS = -2.5 V, ID = -5.5 A
- Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -4 A
- MicroFET 2×2 mm package, low profile — 0.8 mm max
- Typical HBM ESD protection level >3.2 kV
- Halogen-free and antimony oxide-free
- RoHS compliant
Applications
AI Translation
- Cellular phones
- Other ultra-portable applications
- Linear mode applications
C890900 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |