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HUASHUO HSS1N20 product image
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HUASHUO HSS1N20RoHS

Manufacturer
HUASHUOAsian Brands
MPN
HSS1N20
LCSC Part #
C845589
Packaging
SOT-23L
Customer #
Key Attributes
MOSFET N-CH 200V 1A SOT-23L
Datasheetpdf iconHUASHUO HSS1N20
In-Stock: 1,955
1,955 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1734$ 0.87
50+$ 0.144$ 7.20
150+$ 0.1292$ 19.38
500+$ 0.1181$ 59.05
3,000+$ 0.1029$ 308.70
6,000+$ 0.0985$ 591.00
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingSOT-23L
Drain to Source Voltage200V
Current - Continuous Drain(Id)1A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation710mW
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)1.9Ω@10V
Number1 N-channel
Input Capacitance(Ciss)145pF
Gate Charge(Qg)12nC@10V
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Introduction

AI Translation

HSS1N20 is a high cell density trench N-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and efficiency for most low-power switching and load switch applications. HSS1N20 complies with RoHS and green product requirements, and has passed full-function reliability qualification.

Features

AI Translation
  • RoHS-compliant green devices
  • Ultra-low gate charge
  • Excellent Cdv/dt immunity
  • Advanced high-cell-density trench technology