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NTE Electronics 2N5485
| Manufacturer | |
| MPN | 2N5485 |
| LCSC Part # | C7604141 |
| Packaging | TO-92-3 |
| Customer # | |
| Key Attributes | 20mA 1 N-channel 350mW 25V TO-92-3 JFETs |
| Datasheet |  NTE Electronics 2N5485 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-92-3 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | 5pF | |
| Drain Current (Idss) | 20mA | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| operating temperature | -65℃~+150℃ | |
| RDS(on) | - | |
| Gate-Source Breakdown Voltage (Vgss) | 25V | |
| Gate-Source Cutoff Voltage (VGS(off)) | - | |
| Output Capacitance(Coss) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-92-3 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | 5pF | |
| Drain Current (Idss) | 20mA | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 350mW |
| Type | Description | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| operating temperature | -65℃~+150℃ | |
| RDS(on) | - | |
| Gate-Source Breakdown Voltage (Vgss) | 25V | |
| Gate-Source Cutoff Voltage (VGS(off)) | - | |
| Output Capacitance(Coss) | - |
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.7579 | $ 1.76 |
| 200+ | $ 0.7017 | $ 140.34 |
| 500+ | $ 0.679 | $ 339.50 |
| 1,000+ | $ 0.6668 | $ 666.80 |
Standard Packaging1/Full Bag | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-92-3 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | 5pF | |
| Drain Current (Idss) | 20mA | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| operating temperature | -65℃~+150℃ | |
| RDS(on) | - | |
| Gate-Source Breakdown Voltage (Vgss) | 25V | |
| Gate-Source Cutoff Voltage (VGS(off)) | - | |
| Output Capacitance(Coss) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-92-3 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | 5pF | |
| Drain Current (Idss) | 20mA | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 350mW |
| Type | Description | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| operating temperature | -65℃~+150℃ | |
| RDS(on) | - | |
| Gate-Source Breakdown Voltage (Vgss) | 25V | |
| Gate-Source Cutoff Voltage (VGS(off)) | - | |
| Output Capacitance(Coss) | - |
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C7604141 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |