ISSI IS43TR16512S2DL-107MBL

Standard Voltage: VDD and V_DDQ = 1.5V ± 0.075V Low Voltage (L): VDD and V_DDO = 1.35V + 0.1V, -0.067V -Backward compatible to 1.5V High speed data transfer rates with system frequency up to 933 MHz 8 internal banks for concurrent operation 8n-Bit pre-fetch architecture Programmable CAS Latency Programmable Additive Latency: 0, CL - 1, CL - 2 Programmable CAS WRITE latency (CWL) based on tCK Programmable Burst Length: 4 and 8 Programmable Burst Sequence: Sequential or Interleave BL switch on the fly Auto Self Refresh(ASR) Self Refresh Temperature(SRT)

• Configuration: 512Mx16(dual die)
• Package: 96-ball BGA (9mm x 13mm)
• Refresh Interval: 7.8 us (8192 cycles/64 ms) TC = -40℃ to 85℃; 3.9 us (8192 cycles/32 ms) TC = 85℃ to 105℃
• Partial Array Self Refresh
• Asynchronous RESET pin
• OCD (Off-Chip Driver Impedance Adjustment)
• Dynamic ODT (On-Die Termination)
• Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
• Write Leveling Up to 200 MHz in DLL off mode
• Operating temperature: Commercial (TC = 0℃ to +95℃); Industrial (TC = -40℃ to +95℃); Automotive, A1 (TC = -40℃ to +95℃); Automotive, A2 (TC = -40℃ to +105℃)