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VBsemi Elec STP10NM65N-VB product image
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VBsemi Elec STP10NM65N-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
STP10NM65N-VB
LCSC Part #
C7569065
Packaging
TO-220AB
Customer #
Key Attributes
MOSFET N-CH 650V 18A TO-220AB
Datasheetpdf iconVBsemi Elec STP10NM65N-VB
In-Stock: 20
20 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.4794$ 1.2575$ 1.26
10+$ 1.2337$ 1.0487$ 10.49
50+$ 1.0987$ 0.9339$ 46.70
100+$ 0.9461$ 0.8042$ 80.42
500+$ 0.8787$ 0.7469$ 373.45
1,000+$ 0.8482$ 0.7210$ 721.00
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingTO-220AB
Operating Temperature-55℃~+150℃
Drain to Source Voltage650V
Current - Continuous Drain(Id)18A
Output Capacitance(Coss)456pF
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation208W
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)430mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.826nF
Gate Charge(Qg)71nC@10V
TypeN-Channel
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Features

AI Translation
  • Reduced trr, Qrr, and IRRM
  • Low figure-of-merit (FOM) R(on)×Qg
  • Low input capacitance (Ciss)
  • Low switching losses due to reduced Qrr
  • Ultra low gate charge (Qg)
  • Avalanche energy rated (UIS)

Applications

AI Translation
  • Laptop CPU core - high-end switching