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HUASHUO HSP120P03
| Manufacturer | HUASHUOAsian Brands |
| MPN | HSP120P03 |
| LCSC Part # | C7543763 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 120A TO-220 |
| Datasheet |  HUASHUO HSP120P03 |
| Alternative Parts | 3 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 530pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 7.3nF | |
| Gate Charge(Qg) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 530pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 7.3nF | |
| Gate Charge(Qg) | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
HSP120P03 is a high cell density trench P-channel MOSFET offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSP120P03 complies with RoHS and green product requirements, is 100% guaranteed avalanche-rated (EAS), and has passed full-function reliability qualification.
Features
AI Translation
- Ultra-low gate charge
- 100% guaranteed avalanche capability (EAS)
- Green/RoHS-compliant devices available
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
In-Stock: 42
42 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.8091 | $ 0.81 |
| 10+ | $ 0.6824 | $ 6.82 |
| 50+ | $ 0.5882 | $ 29.41 |
| 100+ | $ 0.5248 | $ 52.48 |
| 500+ | $ 0.4874 | $ 243.70 |
| 1,000+ | $ 0.4679 | $ 467.90 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 530pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 7.3nF | |
| Gate Charge(Qg) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 530pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 7.3nF | |
| Gate Charge(Qg) | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
HSP120P03 is a high cell density trench P-channel MOSFET offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSP120P03 complies with RoHS and green product requirements, is 100% guaranteed avalanche-rated (EAS), and has passed full-function reliability qualification.
Features
AI Translation
- Ultra-low gate charge
- 100% guaranteed avalanche capability (EAS)
- Green/RoHS-compliant devices available
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
C7543763 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |