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ANHI ASW65R072EFDA

Manufacturer
ANHIAsian Brands
MPN
ASW65R072EFDA
LCSC Part #
C7494993
Packaging
TO-247
Customer #
Key Attributes
MOSFET N-CH 650V 54A TO-247
Datasheetpdf iconANHI ASW65R072EFDA
Alternative Parts4
Out of Stock
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Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit Price(Reference Only)Total Amount
1+$ 4.1081$ 4.11
10+$ 3.5282$ 35.28
25+$ 3.1822$ 79.56
100+$ 2.7257$ 272.57
500+$ 2.5649$ 1282.45
1,000+$ 2.4918$ 2491.80
Standard Packaging25/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerANHI
PackagingTO-247
Operating Temperature-55℃~+150℃
Drain to Source Voltage650V
Current - Continuous Drain(Id)54A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation172W
Reverse Transfer Capacitance (Crss@Vds)3.08pF
RDS(on)60mΩ
Number1 N-channel
Input Capacitance(Ciss)4.528nF
Gate Charge(Qg)93.78nC

Features

AI Translation
  • Low drain-source on-resistance: RDS(ON)=0.060Ω (typ.)
  • Easy to control Gate switching
  • Enhancement mode: Vth = 3 to 5 V

Applications

AI Translation
  • Soft Switching Boost PFC switch
  • Half bridge or Asymmetric half bridge or Series resonance half bridge and full bridge topologies
  • Such as phase-shift-bridge(ZVS), LLC Application
  • Server Power
  • Telecom Power
  • EV Charging
  • Solar inverter

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
ASW65R041EFDAANHITO-247307$ 4.6353
ASW65R038EFDANHITO-24746$ 5.6545
ASW65R031EFDANHITO-247108$ 4.0485
ASW60R029EFDANHITO-24753$ 6.4339