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VBsemi Elec SI7110DN-T1-GE3-VB product image
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VBsemi Elec SI7110DN-T1-GE3-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
SI7110DN-T1-GE3-VB
LCSC Part #
C7494471
Packaging
DFN3x3-8
Customer #
Key Attributes
MOSFET N-CH 20V 19.8A DFN3x3-8
Datasheetpdf iconVBsemi Elec SI7110DN-T1-GE3-VB
In-Stock: 100
100 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.657$ 0.5585$ 0.56
10+$ 0.5333$ 0.4534$ 4.53
30+$ 0.4723$ 0.4015$ 12.05
100+$ 0.4113$ 0.3497$ 34.97
500+$ 0.3743$ 0.3182$ 159.10
1,000+$ 0.3566$ 0.3032$ 303.20
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingDFN3x3-8
Operating Temperature-55℃~+150℃
Drain to Source Voltage20V
Output Capacitance(Coss)445pF
Current - Continuous Drain(Id)19.8A
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation3.6W
Reverse Transfer Capacitance (Crss@Vds)38pF
RDS(on)5.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.45nF
Gate Charge(Qg)9.4nC@4.5V
Vgs±12V
TypeN-Channel
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Features

AI Translation
  • Trench power MOSFET
  • 100% Rg and UIS tested

Applications

AI Translation
  • High Power Density DC/DC - Synchronous Rectification - Embedded DC/DC