VBsemi Elec IPD50N10S3L-16-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | IPD50N10S3L-16-VB |
| LCSC Part # | C7428998 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 85A TO-252 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 565pF | |
| Current - Continuous Drain(Id) | 85A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 176W | |
| Reverse Transfer Capacitance (Crss@Vds) | 205pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4nF | |
| Gate Charge(Qg) | 160nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 565pF | |
| Current - Continuous Drain(Id) | 85A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 176W | |
| Reverse Transfer Capacitance (Crss@Vds) | 205pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4nF | |
| Gate Charge(Qg) | 160nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- TrenchFET Power MOSFET
- 100 % Rg Tested
- 100 % UIS Tested
Applications
AI Translation
- Primary Side Switch Isolated DC/DC Converter
In-Stock: 1
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.1763 | $ 1.18 |
| 10+ | $ 0.9894 | $ 9.89 |
| 30+ | $ 0.8968 | $ 26.90 |
| 100+ | $ 0.8042 | $ 80.42 |
| 500+ | $ 0.7506 | $ 375.30 |
| 1,000+ | $ 0.7214 | $ 721.40 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 565pF | |
| Current - Continuous Drain(Id) | 85A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 176W | |
| Reverse Transfer Capacitance (Crss@Vds) | 205pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4nF | |
| Gate Charge(Qg) | 160nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 565pF | |
| Current - Continuous Drain(Id) | 85A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 176W | |
| Reverse Transfer Capacitance (Crss@Vds) | 205pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4nF | |
| Gate Charge(Qg) | 160nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- TrenchFET Power MOSFET
- 100 % Rg Tested
- 100 % UIS Tested
Applications
AI Translation
- Primary Side Switch Isolated DC/DC Converter
C7428998 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



