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VISHAY IRFR9310PBF
| Manufacturer | |
| MPN | IRFR9310PBF |
| LCSC Part # | C727773 |
| Packaging | DPAK(TO-252) |
| Customer # | |
| Key Attributes | MOSFET P-CH 400V 1.1A DPAK(TO-252) |
| Datasheet |  VISHAY IRFR9310PBF |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | DPAK(TO-252) | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 400V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 1.1A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| RDS(on) | 7Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 270pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | DPAK(TO-252) | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 400V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 1.1A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| RDS(on) | 7Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 270pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | P-Channel |
Introduction
Third generation power MOSFETs utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
Features
- P-Channel
- Surface Mount (IRFR9310, SiHFR9310) F
- Straight Lead (IRFU9310, SiHFU9310) C
- Advanced Process Technology
- Fast Switching
- Fully Avalanche Rated
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.6061$ 1.3331 | $ 1.33 |
| 10+ | $ 1.3352$ 1.1083 | $ 11.08 |
| 30+ | $ 1.1877$ 0.9858 | $ 29.57 |
| 75+ | $ 1.0194$ 0.8461 | $ 63.46 |
| 525+ | $ 0.9441$ 0.7836 | $ 411.39 |
| 975+ | $ 0.9104$ 0.7557 | $ 736.81 |
Standard Packaging75/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | DPAK(TO-252) | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 400V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 1.1A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| RDS(on) | 7Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 270pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | DPAK(TO-252) | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 400V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 1.1A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| RDS(on) | 7Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 270pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | P-Channel |
Introduction
Third generation power MOSFETs utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
Features
- P-Channel
- Surface Mount (IRFR9310, SiHFR9310) F
- Straight Lead (IRFU9310, SiHFU9310) C
- Advanced Process Technology
- Fast Switching
- Fully Avalanche Rated
C727773 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IRFR9310TRPBF | VISHAY | DPAK(TO-252) | 6,687 | $ 0.7685 | ||
| 2P50G-TN3-R | UTC | TO-252 | 600 | $ 0.2421 | ||
| IRFR9310PBF-VB | VBsemi Elec | TO-252 | 98 | $ 1.41 | ||
| IRFR9310TRLPBF-BE3 | VISHAY | TO-252AA | 0 | $ 0.9305 | ||
| SIHFR9310-GE3 | VISHAY | TO-252AA | 0 | $ 0.3698 | ||
| SIHFR9310TRR-GE3 | VISHAY | TO-252AA | 0 | $ 0.6819 | ||
| SIHFR9310TRL-GE3 | VISHAY | TO-252AA | 0 | $ 0.6819 | ||
| SIHFR9310TR-GE3 | VISHAY | TO-252AA | 0 | $ 1.927 | ||
| IRFR9310TRLPBF | VISHAY | DPAK | 0 | $ 0.9469 | ||
| FQD2P40TF | onsemi | TO-252(DPAK) | 0 | $ 0.4861 |