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VISHAY IRFR9310PBFRoHS

Manufacturer
VISHAY
MPN
IRFR9310PBF
LCSC Part #
C727773
Packaging
DPAK(TO-252)
Customer #
Key Attributes
MOSFET P-CH 400V 1.1A DPAK(TO-252)
Datasheetpdf iconVISHAY IRFR9310PBF
In-Stock: 156
156 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.6061$ 1.5740$ 1.57
10+$ 1.3352$ 1.3085$ 13.09
30+$ 1.1877$ 1.1640$ 34.92
75+$ 1.0194$ 0.9991$ 74.93
525+$ 0.9441$ 0.9253$ 485.78
975+$ 0.9104$ 0.8922$ 869.90
Standard Packaging75/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingDPAK(TO-252)
Configuration-
Drain to Source Voltage400V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)1.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)7Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)270pF
Gate Charge(Qg)13nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging75
Sales UnitPiece

Introduction

AI Translation

Third generation power MOSFETs utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

Features

AI Translation
  • P-Channel
  • Surface Mount (IRFR9310, SiHFR9310) F
  • Straight Lead (IRFU9310, SiHFU9310) C
  • Advanced Process Technology
  • Fast Switching
  • Fully Avalanche Rated