VISHAY SI8425DB-T1-E1
| Manufacturer | |
| MPN | SI8425DB-T1-E1 |
| LCSC Part # | C727420 |
| Packaging | WLCSP-4(1.6x1.6) |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V 9.3A WLCSP-4(1.6x1.6) |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | WLCSP-4(1.6x1.6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 370pF | |
| Current - Continuous Drain(Id) | 9.3A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Pd - Power Dissipation | 1.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 305pF | |
| RDS(on) | 23mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.8nF | |
| Gate Charge(Qg) | 36nC@4.5V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | WLCSP-4(1.6x1.6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 370pF | |
| Current - Continuous Drain(Id) | 9.3A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 305pF | |
| RDS(on) | 23mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.8nF | |
| Gate Charge(Qg) | 36nC@4.5V | |
| Type | P-Channel |
Introduction
Vishay Siliconix’s MICRO FOOT product family is based on a wafer-level chip-scale packaging (WL-CSP) technology that implements a solder bump process to eliminate the need for an outer package to encase the silicon die. MICRO FOOT products include power MOSFETs, analog switches, and power ICs. For battery powered compact devices, this new packaging technology reduces board space requirements, improves thermal performance, and mitigates the parasitic effect typical of leaded packaged products. Vishay Siliconix MICRO FOOT products can be handled with the same process techniques used for high-volume assembly of packaged surface-mount devices. With proper attention to PCB and stencil design, the device will achieve reliable performance without underfill. The advantage of the device’s small footprint and short thermal path make it an ideal option for space-constrained applications in portable devices such as battery packs, PDAs, cellular phones, and notebook computers.
Features
- TrenchFET Power MOSFET
- Low-on resistance
- Ultra-small 1.6 mm x 1.6 mm maximum outline
- Ultra-thin 0.6 mm maximum height
Applications
- Low on-resistance load switch, charger switch and battery switch for portable devices - Low power consumption - Increased battery life
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.397 | $ 0.40 |
| 10+ | $ 0.3877 | $ 3.88 |
| 30+ | $ 0.3815 | $ 11.45 |
| 100+ | $ 0.3753 | $ 37.53 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | WLCSP-4(1.6x1.6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 370pF | |
| Current - Continuous Drain(Id) | 9.3A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Pd - Power Dissipation | 1.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 305pF | |
| RDS(on) | 23mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.8nF | |
| Gate Charge(Qg) | 36nC@4.5V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | WLCSP-4(1.6x1.6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 370pF | |
| Current - Continuous Drain(Id) | 9.3A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 305pF | |
| RDS(on) | 23mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.8nF | |
| Gate Charge(Qg) | 36nC@4.5V | |
| Type | P-Channel |
Introduction
Vishay Siliconix’s MICRO FOOT product family is based on a wafer-level chip-scale packaging (WL-CSP) technology that implements a solder bump process to eliminate the need for an outer package to encase the silicon die. MICRO FOOT products include power MOSFETs, analog switches, and power ICs. For battery powered compact devices, this new packaging technology reduces board space requirements, improves thermal performance, and mitigates the parasitic effect typical of leaded packaged products. Vishay Siliconix MICRO FOOT products can be handled with the same process techniques used for high-volume assembly of packaged surface-mount devices. With proper attention to PCB and stencil design, the device will achieve reliable performance without underfill. The advantage of the device’s small footprint and short thermal path make it an ideal option for space-constrained applications in portable devices such as battery packs, PDAs, cellular phones, and notebook computers.
Features
- TrenchFET Power MOSFET
- Low-on resistance
- Ultra-small 1.6 mm x 1.6 mm maximum outline
- Ultra-thin 0.6 mm maximum height
Applications
- Low on-resistance load switch, charger switch and battery switch for portable devices - Low power consumption - Increased battery life
C727420 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



