VBsemi Elec IPD50N06S2-14-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | IPD50N06S2-14-VB |
| LCSC Part # | C725062 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 58A TO-252 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 470pF | |
| Current - Continuous Drain(Id) | 58A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.65nF | |
| Gate Charge(Qg) | 47nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 470pF | |
| Current - Continuous Drain(Id) | 58A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.65nF | |
| Gate Charge(Qg) | 47nC@10V | |
| Type | N-Channel |
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Features
AI Translation
- Junction temperature 175°C
- Trench power MOSFET
- RoHS compliant
- N-channel MOSFET
In-Stock: 8
8 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.7115$ 0.6048 | $ 0.60 |
| 10+ | $ 0.5881$ 0.4999 | $ 5.00 |
| 30+ | $ 0.5247$ 0.4460 | $ 13.38 |
| 100+ | $ 0.4646$ 0.3950 | $ 39.50 |
| 500+ | $ 0.3785$ 0.3218 | $ 160.90 |
| 1,000+ | $ 0.3607$ 0.3066 | $ 306.60 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 470pF | |
| Current - Continuous Drain(Id) | 58A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.65nF | |
| Gate Charge(Qg) | 47nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 470pF | |
| Current - Continuous Drain(Id) | 58A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.65nF | |
| Gate Charge(Qg) | 47nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Junction temperature 175°C
- Trench power MOSFET
- RoHS compliant
- N-channel MOSFET
C725062 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



