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GeneSiC Semiconductor MBR20080CTR
| Manufacturer | |
| MPN | MBR20080CTR |
| LCSC Part # | C7224963 |
| Packaging | - |
| Customer # | |
| Key Attributes | 1 Pair Common Anode 200A 80V 840mV@100A Diode Arrays RoHS |
| Datasheet |  GeneSiC Semiconductor MBR20080CTR |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Non-Repetitive Peak Forward Surge Current | 1.5kA | |
| Diode Configuration | 1 Pair Common Anode | |
| Current - Rectified | 200A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 80V | |
| Reverse Leakage Current (Ir) | 1mA@80V | |
| Voltage - Forward(Vf@If) | 840mV@100A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Non-Repetitive Peak Forward Surge Current | 1.5kA | |
| Diode Configuration | 1 Pair Common Anode |
| Type | Description | |
|---|---|---|
| Current - Rectified | 200A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 80V | |
| Reverse Leakage Current (Ir) | 1mA@80V | |
| Voltage - Forward(Vf@If) | 840mV@100A |
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Features
AI Translation
- High surge capability
- Reverse repetitive peak voltage (VRRM) range: 45 V ~ 100 V
- Insensitive to ESD
- Dual inline package
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 198.939 | $ 198.94 |
| 200+ | $ 79.3783 | $ 15875.66 |
| 480+ | $ 76.7264 | $ 36828.67 |
| 1,000+ | $ 75.4155 | $ 75415.50 |
Standard Packaging40/Full Bag | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Non-Repetitive Peak Forward Surge Current | 1.5kA | |
| Diode Configuration | 1 Pair Common Anode | |
| Current - Rectified | 200A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 80V | |
| Reverse Leakage Current (Ir) | 1mA@80V | |
| Voltage - Forward(Vf@If) | 840mV@100A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Non-Repetitive Peak Forward Surge Current | 1.5kA | |
| Diode Configuration | 1 Pair Common Anode |
| Type | Description | |
|---|---|---|
| Current - Rectified | 200A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 80V | |
| Reverse Leakage Current (Ir) | 1mA@80V | |
| Voltage - Forward(Vf@If) | 840mV@100A |
Report an ErrorShow similar products (0) >
Features
AI Translation
- High surge capability
- Reverse repetitive peak voltage (VRRM) range: 45 V ~ 100 V
- Insensitive to ESD
- Dual inline package
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |