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MATSUKI ME4894-G
| Manufacturer | MATSUKIAsian Brands |
| MPN | ME4894-G |
| LCSC Part # | C709742 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 12A SOP-8 |
| Datasheet |  MATSUKI ME4894-G |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 2 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MATSUKI | |
| Packaging | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 130pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 820pF | |
| Gate Charge(Qg) | 21nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MATSUKI | |
| Packaging | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 130pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 820pF | |
| Gate Charge(Qg) | 21nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
The ME4894-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
- RDS(ON) ≤ 11 mΩ @ VaS = 10V
- RDS(ON) ≤ 17.5 mΩ @ VaS = 4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
Applications
- Power Management in Note book
- Battery Powered System DC/DC Converter Load Switch
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2178 | $ 1.09 |
| 50+ | $ 0.1729 | $ 8.65 |
| 150+ | $ 0.1537 | $ 23.06 |
| 500+ | $ 0.1296 | $ 64.80 |
| 2,500+ | $ 0.1189 | $ 297.25 |
| 5,000+ | $ 0.1125 | $ 562.50 |
Standard Packaging2500/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MATSUKI | |
| Packaging | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 130pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 820pF | |
| Gate Charge(Qg) | 21nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MATSUKI | |
| Packaging | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 130pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 820pF | |
| Gate Charge(Qg) | 21nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
The ME4894-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
- RDS(ON) ≤ 11 mΩ @ VaS = 10V
- RDS(ON) ≤ 17.5 mΩ @ VaS = 4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
Applications
- Power Management in Note book
- Battery Powered System DC/DC Converter Load Switch
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |