VISHAY SIHJ6N65E-T1-GE3
| Manufacturer | |
| MPN | SIHJ6N65E-T1-GE3 |
| LCSC Part # | C7080476 |
| Packaging | PowerPAKSO-8 |
| Customer # | |
| Key Attributes | 650V 3.6A 2V 74W 755mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS |
| Datasheet |  VISHAY SIHJ6N65E-T1-GE3 |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAKSO-8 | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 3.6A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 74W | |
| RDS(on) | 755mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 32nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAKSO-8 | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 3.6A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 74W | |
| RDS(on) | 755mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 32nC@10V |
Introduction
Power MOS 8^TM is a high-speed, high-voltage N-channel switch-mode power MOSFET. Featuring a proprietary planar stripe design for excellent reliability and manufacturability. Low input capacitance and ultra-low C_rss "Miller" capacitance enable low switching losses. The inherent gate resistance and capacitance of the polysilicon gate structure help control the slew rate during switching, enabling low EMI and reliable paralleling, even when switching at very high frequencies. High avalanche energy capability improves reliability in flyback, boost, forward, and other circuit topologies.
Features
- Low figure of merit (FOM) Ron × Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra-low gate charge (Qg)
- Avalanche energy rated (UIS)
Applications
- Switching Mode Power Supply (SMPS)
- Power Factor Correction (PFC)
- Lighting
- High Intensity Discharge (HID)
- Fluorescent Ballast Lighting
- Consumer Electronics
- Adapters
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 2.4936 | $ 2.49 |
| 200+ | $ 0.9953 | $ 199.06 |
| 500+ | $ 0.9619 | $ 480.95 |
| 1,000+ | $ 0.9461 | $ 946.10 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAKSO-8 | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 3.6A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 74W | |
| RDS(on) | 755mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 32nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAKSO-8 | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 3.6A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 74W | |
| RDS(on) | 755mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 32nC@10V |
Introduction
Power MOS 8^TM is a high-speed, high-voltage N-channel switch-mode power MOSFET. Featuring a proprietary planar stripe design for excellent reliability and manufacturability. Low input capacitance and ultra-low C_rss "Miller" capacitance enable low switching losses. The inherent gate resistance and capacitance of the polysilicon gate structure help control the slew rate during switching, enabling low EMI and reliable paralleling, even when switching at very high frequencies. High avalanche energy capability improves reliability in flyback, boost, forward, and other circuit topologies.
Features
- Low figure of merit (FOM) Ron × Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra-low gate charge (Qg)
- Avalanche energy rated (UIS)
Applications
- Switching Mode Power Supply (SMPS)
- Power Factor Correction (PFC)
- Lighting
- High Intensity Discharge (HID)
- Fluorescent Ballast Lighting
- Consumer Electronics
- Adapters
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| CMSA65R280Q | Cmos | DFN-8(5x6) | 323 | $0.7711 $0.8116 | ||
| CMSA65R380Q | Cmos | DFN-8(5x6) | 3,024 | $0.3834 $0.4035 | ||
| CMSA6N70 | Cmos | DFN-8(5x6) | 3 | $0.3210 $0.3378 | ||
| WTM11N65ANF | WPMtek | PDFN5x6-8 | 154 | $ 0.6037 | ||
| DON15N65S | DOINGTER | DFN-8(5x6) | 86 | $ 0.6701 | ||
| SIHJ7N65E-T1-GE3 | VISHAY | PowerPAKSO-8 | 0 | $ 2.7399 | ||
| MSJAC11N65Y-TP | MCC | DFN-8(5.7x5.1) | 0 | $ 2.1564 | ||
| TPG65R360M | WUXI UNIGROUP MICRO | DFN-8-EP(6.1x5.2) | 0 | $ 0.6467 | ||
| TPG70R600M | WUXI UNIGROUP MICRO | PDFN-8(5x6) | 0 | $ 0.7295 | ||
| VBQA165R05S | VBsemi Elec | DFN-8(5x6) | 0 | $ 1.0011 |