Images for reference only
EDA ModelsEasyEDA
RENESAS RJP60F4DPM-00#T1
| Manufacturer | |
| MPN | RJP60F4DPM-00#T1 |
| LCSC Part # | C7049572 |
| Packaging | TO-3PFM |
| Customer # | |
| Key Attributes | 41.2W 60A 600V TO-3PFM Single IGBTs RoHS |
| Datasheet |  RENESAS RJP60F4DPM-00#T1 |
| Alternative Parts | 3 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | RENESAS | |
| Packaging | TO-3PFM | |
| Pd - Power Dissipation | 41.2W | |
| Td(off) | 70ns | |
| Td(on) | 45ns | |
| Current - Collector(Ic) | 60A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 33pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.82V@15V,30A | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 1.4V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 1.9nF | |
| Gate Charge(Qg) | - | |
| Output Capacitance(Coes) | 70pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | RENESAS | |
| Packaging | TO-3PFM | |
| Pd - Power Dissipation | 41.2W | |
| Td(off) | 70ns | |
| Td(on) | 45ns | |
| Current - Collector(Ic) | 60A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 33pF | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.82V@15V,30A | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 1.4V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 1.9nF | |
| Gate Charge(Qg) | - | |
| Output Capacitance(Coes) | 70pF |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Low collector-emitter saturation voltage VCE(sat) = 1.4 V (typical) (at IC = 30 A, VGE = 15 V, Ta = 25℃)
- Trench gate and thin wafer technology
- High-speed switching
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 10.6902 | $ 10.69 |
| 200+ | $ 4.265 | $ 853.00 |
| 500+ | $ 4.1237 | $ 2061.85 |
| 1,000+ | $ 4.0523 | $ 4052.30 |
Standard Packaging1/Full Tube | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | RENESAS | |
| Packaging | TO-3PFM | |
| Pd - Power Dissipation | 41.2W | |
| Td(off) | 70ns | |
| Td(on) | 45ns | |
| Current - Collector(Ic) | 60A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 33pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.82V@15V,30A | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 1.4V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 1.9nF | |
| Gate Charge(Qg) | - | |
| Output Capacitance(Coes) | 70pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | RENESAS | |
| Packaging | TO-3PFM | |
| Pd - Power Dissipation | 41.2W | |
| Td(off) | 70ns | |
| Td(on) | 45ns | |
| Current - Collector(Ic) | 60A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 33pF | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.82V@15V,30A | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 1.4V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 1.9nF | |
| Gate Charge(Qg) | - | |
| Output Capacitance(Coes) | 70pF |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Low collector-emitter saturation voltage VCE(sat) = 1.4 V (typical) (at IC = 30 A, VGE = 15 V, Ta = 25℃)
- Trench gate and thin wafer technology
- High-speed switching
C7049572 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| STGFW40V60DF | ST | TO-3PFM | 2 | $ 12.2335 | ||
| RJH65T04BDPM-A0#T2 | RENESAS | TO-3PFP | 0 | $ 7.8227 | ||
| FGAF40S65AQ | onsemi | TO-3PF-3 | 0 | $ 2.5231 |