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VBsemi Elec SI4466DY-T1-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
SI4466DY-T1-VB
LCSC Part #
C693336
Packaging
SO-8
Customer #
Key Attributes
MOSFET N-CH 30V 18A SO-8
Datasheetpdf iconVBsemi Elec SI4466DY-T1-VB
In-Stock: 20
20 In stock, ships now
Not recommended for new designs
Once stock is depleted, this item will be marked as "Out of Stock."
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Minimum: 1Multiple: 1Sales Unit: Piece
QtyUnit PriceTotal Amount
1+$ 0.5589$ 0.5310$ 0.53
10+$ 0.4446$ 0.4224$ 4.22
30+$ 0.3954$ 0.3757$ 11.27
100+$ 0.3335$ 0.3169$ 31.69
500+$ 0.2969$ 0.2821$ 141.05
1,000+$ 0.2811$ 0.2671$ 267.10
Standard Packaging4000/Full Reel

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingSO-8
Operating Temperature-55℃~+150℃
Drain to Source Voltage30V
Current - Continuous Drain(Id)18A
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)73pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)820pF
Gate Charge(Qg)6.8nC@10V
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Features

AI Translation
  • Halogen-free
  • TrenchFET Power MOSFET Optimized for High-Side Synchronous Rectifier Operation
  • 100 % Rg Tested
  • 100 % UIS Tested

Applications

AI Translation
  • Notebook CPU Core - High-Side Switch
  • N-Channel MOSFET