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ADI LTC4442EMS8E#PBF product image
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ADI LTC4442EMS8E#PBFRoHS

Manufacturer
ADI
MPN
LTC4442EMS8E#PBF
LCSC Part #
C688566
Packaging
MSOP-8-EP
Customer #
Key Attributes
High Speed Synchronous N-Channel MOSFET Drivers
Datasheetpdf iconADI LTC4442EMS8E#PBF
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QtyUnit PriceTotal Amount
1+$ 2.9085$ 2.91
10+$ 2.8409$ 28.41
30+$ 2.7958$ 83.87
100+$ 2.7507$ 275.07
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerADI
PackagingMSOP-8-EP
Input Logic Level - Low-
Low Level Delay Time20ns
High Level Delay Time12ns
Quiescent Current-
Input Logic Level - High3V~4V
Voltage - Supply6V~9.5V
Driven ConfigurationHigh Side;Low Side
Current - Output Low(IOL)5A
Rise Time12ns
Fall Time8ns
FeaturesUnder Voltage Protection;Enable shutdown;Interleaved conduction protection
Current - Output High(IOH)2.4A
Load TypeMOSFET
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Introduction

AI Translation

The LTC4442 is a high frequency gate driver designed to drive two N-channel MOSFETs in a synchronous buck DC/DC converter topology. The powerful driver capability reduces switching losses in MOSFETs with high gate capacitance.

The LTC4442 features a separate supply for the input logic to match the signal swing of the controller IC. If the input signal is not being driven, the LTC4442 activates a shutdown mode that turns off both external MOSFETs. The input logic signal is internally level-shifted to the bootstrapped supply, which may function at up to 42V above ground.

The LTC4442 contains undervoltage lockout circuits on both the driver and logic supplies that turn off the external MOSFETs when an undervoltage condition is present. The LTC4442 and LTC4442-1 have different undervoltage lockout thresholds to accommodate a wide variety of applications. An adaptive shoot-through protection feature is also built-in to prevent power loss resulting from MOSFET cross-conduction current.

The LTC4442/LTC4442-1 are available in the thermally enhanced 8-lead MSOP package.

Features

AI Translation
  • Wide V Range: 6V to 9.5V
  • 38V Maximum Input Supply Voltage
  • Adaptive Shoot-Through Protection
  • 2.4A Peak Pull-Up Current
  • 5A Peak Pull-Down Current
  • 8ns TG Fall Time Driving 3000pF Load
  • 12ns TG Rise Time Driving 3000pF Load
  • Separate Supply to Match PWM Controller
  • Drives Dual N-Channel MOSFETs
  • Undervoltage Lockout
  • Thermally Enhanced MSOP Package

Applications

AI Translation
  • Distributed Power Architectures
  • High Density Power Modules