VISHAY SIR170DP-T1-RE3
| Manufacturer | |
| MPN | SIR170DP-T1-RE3 |
| LCSC Part # | C6816928 |
| Packaging | PowerPAKSO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 95A PowerPAKSO-8 |
| Datasheet |  VISHAY SIR170DP-T1-RE3 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAKSO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 383pF | |
| Current - Continuous Drain(Id) | 95A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 104W | |
| RDS(on) | 4.8mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 93pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.195nF | |
| Gate Charge(Qg) | 42nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAKSO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 383pF | |
| Current - Continuous Drain(Id) | 95A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 104W | |
| RDS(on) | 4.8mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 93pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.195nF | |
| Gate Charge(Qg) | 42nC@10V | |
| Type | N-Channel |
Introduction
P-Channel 30V (D-S) MOSFET in PowerPAK 1212-8 delivers ultra-low thermal impedance in a compact package for space-constrained applications. This package is derived from the PowerPAK SO-8, utilizing the same packaging technology to maximize die area. The exposed die attach pad on the bottom provides a direct, low-resistance thermal path to the substrate on which the device is mounted. The PowerPAK 1212-8 brings the advantages of the PowerPAK SO-8 into a smaller footprint with the same level of thermal performance. Its footprint is comparable to TSOP-6, more than 40% smaller than standard TSSOP-8, with more than twice the die capacity of standard TSOP-6, thermal performance an order of magnitude better than SO-8, and 20x better than TSSOP-8. For applications that would otherwise require a larger package solely for thermal dissipation reasons, the PowerPAK 1212-8 is an excellent choice.
Features
- TrenchFET Gen IV power MOSFET
- Very low RDS×Qg figure-of-merit (FOM)
- Tuned for the lowest RDS×Qoss FOM
- 100 % Rg and UIS tested
Applications
- Synchronous rectification
- Primary side switch
- DC/DC converters
- OR-ing
- Power supplies
- Motor drive control
- Battery and load switch
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.4268 | $ 3.43 |
| 10+ | $ 3.0172 | $ 30.17 |
| 30+ | $ 2.7587 | $ 82.76 |
| 100+ | $ 2.4954 | $ 249.54 |
| 500+ | $ 2.3767 | $ 1188.35 |
| 1,000+ | $ 2.3247 | $ 2324.70 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAKSO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 383pF | |
| Current - Continuous Drain(Id) | 95A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 104W | |
| RDS(on) | 4.8mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 93pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.195nF | |
| Gate Charge(Qg) | 42nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAKSO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 383pF | |
| Current - Continuous Drain(Id) | 95A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 104W | |
| RDS(on) | 4.8mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 93pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.195nF | |
| Gate Charge(Qg) | 42nC@10V | |
| Type | N-Channel |
Introduction
P-Channel 30V (D-S) MOSFET in PowerPAK 1212-8 delivers ultra-low thermal impedance in a compact package for space-constrained applications. This package is derived from the PowerPAK SO-8, utilizing the same packaging technology to maximize die area. The exposed die attach pad on the bottom provides a direct, low-resistance thermal path to the substrate on which the device is mounted. The PowerPAK 1212-8 brings the advantages of the PowerPAK SO-8 into a smaller footprint with the same level of thermal performance. Its footprint is comparable to TSOP-6, more than 40% smaller than standard TSSOP-8, with more than twice the die capacity of standard TSOP-6, thermal performance an order of magnitude better than SO-8, and 20x better than TSSOP-8. For applications that would otherwise require a larger package solely for thermal dissipation reasons, the PowerPAK 1212-8 is an excellent choice.
Features
- TrenchFET Gen IV power MOSFET
- Very low RDS×Qg figure-of-merit (FOM)
- Tuned for the lowest RDS×Qoss FOM
- 100 % Rg and UIS tested
Applications
- Synchronous rectification
- Primary side switch
- DC/DC converters
- OR-ing
- Power supplies
- Motor drive control
- Battery and load switch
C6816928 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |