Infineon CY15B256Q-SXE

The CY15B256Q is a 256 Kbit nonvolatile memory employing an advanced ferroelectric process. F-RAM is nonvolatile and performs reads and writes similar to RAM. It retains data reliably for 121 years while eliminating the complexities, overhead, and system-level reliability concerns associated with serial Flash, EEPROM, and other nonvolatile memories. Unlike serial Flash and EEPROM, the CY15B256Q performs write operations at bus speed with no write delay. Data is written to the memory array immediately after each byte is successfully transferred to the device, and the next bus cycle can begin without data polling. In addition, the device offers exceptional write endurance compared to other nonvolatile memories. The CY15B256Q supports 10¹³ read/write cycles — 10 million times more write cycles than EEPROM. These characteristics make the CY15B256Q ideally suited for nonvolatile memory applications requiring frequent or high-speed writes, such as data logging — where write cycle count can be critical — and industrial control applications with strict requirements against data loss due to the long write times of serial Flash or EEPROM. As a hardware drop-in replacement for serial EEPROM or Flash, the CY15B256Q delivers significant benefits to users. It employs a high-speed SPI bus, further enhancing the high-speed write capability of F-RAM technology. The device includes a read-only device ID that allows the host to identify the manufacturer, product density, and product revision. Device specifications are guaranteed over the automotive temperature range of -40°C to +125°C.

• 256 Kbit F-RAM, organized as 32 K × 8
• High endurance: 100 trillion (10¹³) read/write cycles
• 121-year data retention (see Data Retention and Endurance table)
• NoDelay™ write
• Advanced high-reliability ferroelectric process
• Very fast SPI
• Up to 33 MHz
• Direct hardware replacement for serial Flash and EEPROM
• Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Sophisticated write protection scheme
• Hardware protection via write protect (WP) pin
• Software protection via Write Disable instruction
• Software block protection for 1/4, 1/2, or full array
• Device ID: manufacturer ID and product ID
• Low power consumption
• 5 mA active current at 33 MHz
• 500 μA standby current
• 12 μA sleep mode current
• Low voltage operation: VDD = 2.7 V to 3.6 V
• Automotive temperature range: -40°C to +125°C
• 8-pin SOIC package
• AEC Q100 Grade 1 compliant
• RoHS compliant

• Data logging
• Industrial control