- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
ST STF10LN80K5
| Manufacturer | |
| MPN | STF10LN80K5 |
| LCSC Part # | C672386 |
| Packaging | TO-220FP-3 |
| Customer # | |
| Key Attributes | 800V 8A 5V 25W 550mΩ@10V 1 N-channel N-Channel TO-220FP-3 Single FETs, MOSFETs RoHS |
| Datasheet |  ST STF10LN80K5 |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FP-3 | |
| Drain to Source Voltage | 800V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 43pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 250fF | |
| RDS(on) | 550mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 427pF | |
| Gate Charge(Qg) | 15nC | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FP-3 | |
| Drain to Source Voltage | 800V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 43pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 250fF | |
| RDS(on) | 550mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 427pF | |
| Gate Charge(Qg) | 15nC | |
| Vgs | ±30V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This ultra-high voltage N-channel power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. This significantly reduces on-resistance and achieves ultra-low gate charge, making it ideal for applications with demanding power density and efficiency requirements.
Features
AI Translation
- Industry-lowest RDS(on) × area product
- Best-in-class figure of merit (FoM)
- Ultra-low gate charge
- 100% avalanche tested
- Zener protection
Applications
AI Translation
- Switching applications
In-Stock: 10
10 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 10.1799 | $ 10.18 |
| 10+ | $ 10.0451 | $ 100.45 |
| 30+ | $ 9.9541 | $ 298.62 |
| 100+ | $ 9.8648 | $ 986.48 |
Standard Packaging1000/Full Tube | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FP-3 | |
| Drain to Source Voltage | 800V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 43pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 250fF | |
| RDS(on) | 550mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 427pF | |
| Gate Charge(Qg) | 15nC | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FP-3 | |
| Drain to Source Voltage | 800V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 43pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 250fF | |
| RDS(on) | 550mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 427pF | |
| Gate Charge(Qg) | 15nC | |
| Vgs | ±30V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This ultra-high voltage N-channel power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. This significantly reduces on-resistance and achieves ultra-low gate charge, making it ideal for applications with demanding power density and efficiency requirements.
Features
AI Translation
- Industry-lowest RDS(on) × area product
- Best-in-class figure of merit (FoM)
- Ultra-low gate charge
- 100% avalanche tested
- Zener protection
Applications
AI Translation
- Switching applications
C672386 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| STF6N95K5 | ST | TO-220FPAB-3 | 916 | $ 1.4034 | ||
| STF8N90K5 | ST | TO-220FP | 2,415 | $ 2.6565 | ||
| STF10N80K5 | ST | TO-220FP | 21 | $ 2.8594 | ||
| STF15N95K5 | ST | TO-220FP | 119 | $ 5.0218 | ||
| RSE80R500F | REASUNOS | TO-220F | 450 | $1.0234 $1.0772 | ||
| NTPF600N80S3Z-VB | VBsemi Elec | TO-220F | 5 | $1.8692 $2.199 | ||
| STF10N80K5-VB | VBsemi Elec | TO-220F | 5 | $1.8692 $2.199 | ||
| STF10N95K5 | ST | TO-220FP-3 | 120 | $ 2.9641 | ||
| STF14N80K5 | ST | TO-220FP | 1,031 | $ 3.0365 | ||
| TK10A80W-VB | VBsemi Elec | TO-220F | 0 | $ 2.199 |