- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
Infineon BCR22PNH6327XTSA1
| Manufacturer | |
| MPN | BCR22PNH6327XTSA1 |
| LCSC Part # | C672245 |
| Packaging | SOT-363-6 |
| Customer # | |
| Key Attributes | TRANS PREBIAS NPN 50V SOT-363-6 |
| Datasheet |  Infineon BCR22PNH6327XTSA1 |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | Infineon | |
| Packaging | SOT-363-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 130MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 50 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Operating Temperature | - | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | 1.5V@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN, 1 PNP Pre-Biased |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | Infineon | |
| Packaging | SOT-363-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 130MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 50 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Operating Temperature | - | |
| Output Voltage(VO(on)) | - |
| Type | Description | |
|---|---|---|
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | 1.5V@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN, 1 PNP Pre-Biased |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Switching circuit, inverter, interface circuit, driver circuit
- Two (galvanic) internal isolated NPN/PNP Transistors in one package
- Built in bias resistor NPN and PNP (R₁ = 22 kΩ, R₂ = 22 kΩ)
- Pb-free (RoHS compliant) package
- Qualified according AEC Q101
In-Stock: 237
237 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.8994 | $ 0.90 |
| 10+ | $ 0.7297 | $ 7.30 |
| 30+ | $ 0.6448 | $ 19.34 |
| 100+ | $ 0.5616 | $ 56.16 |
| 500+ | $ 0.511 | $ 255.50 |
| 1,000+ | $ 0.4848 | $ 484.80 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | Infineon | |
| Packaging | SOT-363-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 130MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 50 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Operating Temperature | - | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | 1.5V@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN, 1 PNP Pre-Biased |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | Infineon | |
| Packaging | SOT-363-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 130MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 50 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Operating Temperature | - | |
| Output Voltage(VO(on)) | - |
| Type | Description | |
|---|---|---|
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | 1.5V@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN, 1 PNP Pre-Biased |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Switching circuit, inverter, interface circuit, driver circuit
- Two (galvanic) internal isolated NPN/PNP Transistors in one package
- Built in bias resistor NPN and PNP (R₁ = 22 kΩ, R₂ = 22 kΩ)
- Pb-free (RoHS compliant) package
- Qualified according AEC Q101
C672245 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| NHUMD3X | Nexperia | TSSOP-6 | 15 | $ 0.4291 | ||
| RN4903,LF(CT | TOSHIBA | SOT-363 | 2,510 | $ 0.0951 | ||
| NHUMD2F | Nexperia | TSSOP-6 | 100 | $ 0.2799 | ||
| NHUMD2X | Nexperia | TSSOP-6 | 10 | $ 0.067 | ||
| ACX124EUQ-13R | DIODES | SOT-363 | 0 | $ 0.0836 | ||
| RN4988(TE85L,F) | TOSHIBA | TSSOP-6(SC-88)SOT-363 | 0 | $ 0.1061 | ||
| RN4983,LF(CT | TOSHIBA | TSSOP-6(SC-88)SOT-363 | 0 | $ 0.1072 | ||
| RN4909,LXHF(CT | TOSHIBA | TSSOP-6(SC-88)SOT-363 | 0 | $ 0.1368 | ||
| RN4909,LF(CT | TOSHIBA | TSSOP-6(SC-88)SOT-363 | 0 | $ 0.0695 | ||
| UMD4NTR | ROHM | SOT-363 | 0 | $ 0.056 |