LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
ST STW10NK60Z product image
  • STW10NK60Z thumbnail 1
  • STW10NK60Z thumbnail 2
  • STW10NK60Z thumbnail 3
  • Pinout
  • Footprint
Images for reference only

ST STW10NK60ZRoHS

Manufacturer
ST
MPN
STW10NK60Z
LCSC Part #
C672237
Packaging
TO-247
Customer #
Key Attributes
MOSFET N-CH 600V 10A TO-247
Datasheetpdf iconST STW10NK60Z
In-Stock: 20
20 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 4.0844$ 4.08
10+$ 3.7529$ 37.53
30+$ 3.5466$ 106.40
100+$ 3.3354$ 333.54
500+$ 3.2395$ 1619.75
1,000+$ 3.1989$ 3198.90
Standard Packaging30/Full Tube
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-247
Operating Temperature-55℃~+150℃
Drain to Source Voltage600V
Output Capacitance(Coss)156pF
Current - Continuous Drain(Id)10A
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)37pF
RDS(on)750mΩ
Number1 N-channel
Input Capacitance(Ciss)1.37nF
Gate Charge(Qg)70nC
Vgs±30V
TypeN-Channel
Report an ErrorShow similar products (0) >

Introduction

AI Translation

These devices are N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Features

AI Translation
  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Zener-protected

Applications

AI Translation
  • Switching applications