Infineon 2N7002H6327
| Manufacturer | |
| MPN | 2N7002H6327 |
| LCSC Part # | C672108 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 0.3A SOT-23 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 300mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 20pF | |
| Gate Charge(Qg) | 600pC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 300mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 20pF | |
| Gate Charge(Qg) | 600pC |
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Features
AI Translation
- N-channel
- Enhancement mode
- Logic level
- Avalanche rated
- fast switching
- Pb-free lead-plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
In-Stock: 400
400 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0891 | $ 0.45 |
| 50+ | $ 0.0729 | $ 3.65 |
| 150+ | $ 0.0647 | $ 9.71 |
| 500+ | $ 0.0587 | $ 29.35 |
| 3,000+ | $ 0.0538 | $ 161.40 |
| 6,000+ | $ 0.0513 | $ 307.80 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 300mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 20pF | |
| Gate Charge(Qg) | 600pC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 300mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 20pF | |
| Gate Charge(Qg) | 600pC |
Report an ErrorShow similar products (0) >
Features
AI Translation
- N-channel
- Enhancement mode
- Logic level
- Avalanche rated
- fast switching
- Pb-free lead-plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
C672108 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



