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VBsemi Elec SQ2309ES-T1-GE3-VB product image
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VBsemi Elec SQ2309ES-T1-GE3-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
SQ2309ES-T1-GE3-VB
LCSC Part #
C6705325
Packaging
SOT-23(TO-236)
Customer #
Key Attributes
MOSFET P-CH 60V 3.8A SOT-23(TO-236)
Datasheetpdf iconVBsemi Elec SQ2309ES-T1-GE3-VB
In-Stock: 320
320 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3822$ 0.3631$ 1.82
50+$ 0.309$ 0.2936$ 14.68
150+$ 0.2776$ 0.2638$ 39.57
500+$ 0.2384$ 0.2265$ 113.25
3,000+$ 0.2024$ 0.1923$ 576.90
6,000+$ 0.1919$ 0.1824$ 1094.40
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingSOT-23(TO-236)
Operating Temperature-55℃~+175℃
Drain to Source Voltage60V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)3.8A
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation27W
Reverse Transfer Capacitance (Crss@Vds)31pF
RDS(on)50mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)270pF
Gate Charge(Qg)12nC@10V
TypeP-Channel
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Features

AI Translation
  • Isolated Package
  • High Voltage Isolation = 2.5 kV RMS (t = 60 s, f = 60 Hz)
  • Sink to Lead Creepage Distance = 4.8 mm
  • P-Channel
  • 175 °C Operating Temperature
  • Dynamic dV/dt Rating
  • Low Thermal Resistance
  • Lead (Pb)-free Available