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RENESAS 71V3576YS150PF product image
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RENESAS 71V3576YS150PF

Manufacturer
MPN
71V3576YS150PF
LCSC Part #
C6701708
Packaging
TQFP-100(14x20)
Customer #
Key Attributes
3.135V~3.465V TQFP-100(14x20) Memory
Datasheetpdf iconRENESAS 71V3576YS150PF
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QtyUnit Price(Reference Only)Total Amount
1+$ 4.164$ 4.16
200+$ 1.6622$ 332.44
500+$ 1.6067$ 803.35
1,000+$ 1.5789$ 1578.90
Standard Packaging1000/Full Reel
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerRENESAS
PackagingTQFP-100(14x20)
Operating Temperature-
FeaturesAuto power-down function;Boundary scan (JTAG) function
Memory Size-
Voltage - Supply3.135V~3.465V
Access Time3.8ns
Current - Supply-
Standby Supply Current-
Interface-

Introduction

AI Translation

The IDT71V3576/78 are high-speed SRAMs organized as 128K x 36/256K x 18. These SRAMs contain write, data, address, and control registers. The internal logic allows the SRAMs to generate self-timed write operations based on a decision that can be deferred until the end of the write cycle. These SRAMs are fabricated using high-performance CMOS process technology and are packaged in JEDEC-standard 14mm x 20mm 100-pin TQFP, 119-ball BGA, and 165-ball FBGA packages.

Features

AI Translation
  • Supports 128K x 36 and 256K x 18 memory configurations.
  • High system speed support.
  • LBO input selects interleaved or linear burst mode.
  • Self-timed write cycle with global write control, byte write enable, and byte write.
  • Core supply voltage: 3.3V.
  • Power-down mode controlled via ZZ input.
  • I/O voltage: 3.3V.
  • Optional boundary scan JTAG interface, compliant with IEEE 1149.1.
  • Multiple package options available.