Central 2N6431 PBFREE
| Manufacturer | |
| MPN | 2N6431 PBFREE |
| LCSC Part # | C6667685 |
| Packaging | TO-18 |
| Customer # | |
| Key Attributes | 300V 50 NPN TO-18 Single Bipolar Transistors RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Central | |
| Packaging | TO-18 | |
| Current - Collector Cutoff | 100nA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | 50MHz | |
| Collector - Emitter Voltage VCEO | 300V | |
| DC Current Gain | 50 | |
| Pd - Power Dissipation | 1.8W | |
| Current - Collector(Ic) | - | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Central | |
| Packaging | TO-18 | |
| Current - Collector Cutoff | 100nA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | 50MHz |
| Type | Description | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 300V | |
| DC Current Gain | 50 | |
| Pd - Power Dissipation | 1.8W | |
| Current - Collector(Ic) | - | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
CENTRAL SEMICONDUCTOR's 2N6430 series devices are complementary small-signal silicon transistors fabricated using epitaxial planar technology, designed for high-voltage amplifier applications.
Applications
AI Translation
High-Voltage Amplifier
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 5.4635 | $ 5.46 |
| 200+ | $ 2.1809 | $ 436.18 |
| 500+ | $ 2.1081 | $ 1054.05 |
| 1,000+ | $ 2.0717 | $ 2071.70 |
Standard Packaging2000/Full Bag | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Central | |
| Packaging | TO-18 | |
| Current - Collector Cutoff | 100nA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | 50MHz | |
| Collector - Emitter Voltage VCEO | 300V | |
| DC Current Gain | 50 | |
| Pd - Power Dissipation | 1.8W | |
| Current - Collector(Ic) | - | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Central | |
| Packaging | TO-18 | |
| Current - Collector Cutoff | 100nA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | 50MHz |
| Type | Description | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 300V | |
| DC Current Gain | 50 | |
| Pd - Power Dissipation | 1.8W | |
| Current - Collector(Ic) | - | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
CENTRAL SEMICONDUCTOR's 2N6430 series devices are complementary small-signal silicon transistors fabricated using epitaxial planar technology, designed for high-voltage amplifier applications.
Applications
AI Translation
High-Voltage Amplifier
C6667685 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |

