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ADI ADUM4121CRIZ product image
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ADI ADUM4121CRIZRoHS

Manufacturer
ADI
MPN
ADUM4121CRIZ
LCSC Part #
C660934
Packaging
SOIC-8-300mil
Customer #
Key Attributes
18ns 18ns SOIC-8-300mil Isolators - Gate Drivers RoHS
Datasheetpdf iconADI ADUM4121CRIZ
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QtyUnit PriceTotal Amount
1+$ 8.2654$ 8.27
10+$ 8.0865$ 80.87
30+$ 7.9678$ 239.03
100+$ 7.8491$ 784.91
Standard Packaging80/Full Tube
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Products Specifications

All
TypeDescription
CategoryIsolators/Isolators - Gate Drivers
ManufacturerADI
PackagingSOIC-8-300mil
Driven Configuration-
FeaturesMiller clamp protection
Operating Temperature-40℃~+125℃
Current - Output High(IOH)-
Input Logic Level - High-
Rise Time18ns
Voltage - Supply4.5V~35V;2.5V~6.5V
Fall Time18ns
CMTI(kV/us)150kV/us
Number of Channels1
Current - Output Low(IOL)-
Quiescent Current-
Propagation Delay(tpd)32ns;38ns
Load TypeIGBT、MOSFET、SiC、GaN
Isolation Voltage(Vrms)5000V
Input Logic Level - Low-
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Introduction

AI Translation

The ADuM4121/ADuM4121-1 are 2 A isolated single-channel gate drivers that use iCoupler technology to provide precision isolation. They offer 5 kV rms isolation in an 8-lead wide-body SOIC package. These isolated devices integrate high-speed CMOS with monolithic transformer technology, delivering superior performance compared to discrete alternatives such as pulse transformers combined with gate drivers. The input supply voltage range of 2.5 V to 6.5 V during operation ensures compatibility with lower-voltage systems. Compared to gate drivers using high-voltage level-shift methods, the ADuM4121/ADuM4121-1 offer true galvanic isolation between input and output. An integrated Miller clamp activates at 2 V on the falling edge of the gate drive output, providing a low-impedance path for the driven gate to reduce the likelihood of Miller capacitance-induced turn-on. An option to enable or disable thermal shutdown is available. As a result, the ADuM4121/ADuM4121-1 can reliably control the switching characteristics of IGBT/MOSFET configurations across a wide range of switching voltages.

Features

AI Translation
  • 2 A peak output current (<2 Ω R<sub>DSON</sub>)
  • 2.5 V to 6.5 V input
  • 4.5 V to 35 V output
  • UVLO: 2.5 V V<sub>DD</sub>
  • Multiple UVLO options for VO2
    • Grade A: 4.4 V (typical) UVLO - V<sub>PO2</sub>
    • Grade B: 7.3 V (typical) UVLO - V<sub>PO2</sub>
    • Grade C: 11.3 V (typical) UVLO - V<sub>O2</sub>
  • Precision timing characteristics
    • Isolator and driver propagation delay: 53 ns (maximum)
  • CMOS input logic levels
  • High common-mode transient immunity: >150 kV/μs
  • Maximum operating junction temperature: 125°C
  • Default output low
  • Integrated Miller clamp
  • Safety and regulatory certifications (pending)
    • UL recognition (UL 1577)
    • 5 kV rms withstand voltage test (1 minute)
    • CSA Component Acceptance Notice 5A
    • VDE certificate of conformity (pending)
    • DIN V VDE V 0884-10 (VDE V 0884-10): 2006-12
    • V<sub>10RM</sub> = 849 V peak
  • 8-pin wide-body SOIC package

Applications

AI Translation
  • Switching power supplies
  • Isolated IGBT/MOSFET gate drivers
  • Industrial inverters
  • GaN/SiC power devices