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Modelos EDAEasyEDA
MICROCHIP APT58M50JU2
| Fabricante | |
| N.º de pieza fab. | APT58M50JU2 |
| Nº LCSC | C6506863 |
| Emb. | SOT-227 |
| Número de Cliente | |
| Atrib. clave | 500V 58A 4V 543W 65mΩ@10V 1 N-channel SOT-227 Single FETs, MOSFETs RoHS |
| Hoja de Datos |  MICROCHIP APT58M50JU2 |
| Componentes alternativos | 10 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | MICROCHIP | |
| Emb. | SOT-227 | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 58A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 543W | |
| RDS(on) | 65mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 10.8nF | |
| Gate Charge(Qg) | 340nC@10V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | MICROCHIP | |
| Emb. | SOT-227 | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 58A |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 543W | |
| RDS(on) | 65mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 10.8nF | |
| Gate Charge(Qg) | 340nC@10V |
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Descripción
Traducción por IA
AOW12N65 and AOWF12N65 are manufactured using an advanced high-voltage MOSFET process, designed to deliver high performance and high reliability for common AC-DC applications. These devices feature low RDS(on), Ciss, and Crss, along with guaranteed avalanche capability, enabling rapid deployment in both new and existing off-line power supply designs.
Características
Traducción por IA
- Power MOS 8T™ MOSFET
- Low on-state resistance (R<sub>DS(on)</sub>)
- Low input capacitance and Miller capacitance
- Low gate charge
- Avalanche energy rated
- High ruggedness
- ISOTOP package (SOT-227)
- Ultra-low stray inductance
- High integration density
Aplicaciones
Traducción por IA
- AC and DC motor control
- Switching power supplies
- Power factor correction
- Braking switches
Agotado
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Mínimo: 1Múltiplo: 1Unidad de venta: Piece
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| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 83.6984 | $ 83.70 |
| 200+ | $ 33.3973 | $ 6679.46 |
| 500+ | $ 32.2803 | $ 16140.15 |
| 1,000+ | $ 31.7287 | $ 31728.70 |
Encapsulado Estándar1/Full Bag | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | MICROCHIP | |
| Emb. | SOT-227 | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 58A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 543W | |
| RDS(on) | 65mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 10.8nF | |
| Gate Charge(Qg) | 340nC@10V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | MICROCHIP | |
| Emb. | SOT-227 | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 58A |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 543W | |
| RDS(on) | 65mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 10.8nF | |
| Gate Charge(Qg) | 340nC@10V |
Reportar un errorMostrar productos similares (0) >
Descripción
Traducción por IA
AOW12N65 and AOWF12N65 are manufactured using an advanced high-voltage MOSFET process, designed to deliver high performance and high reliability for common AC-DC applications. These devices feature low RDS(on), Ciss, and Crss, along with guaranteed avalanche capability, enabling rapid deployment in both new and existing off-line power supply designs.
Características
Traducción por IA
- Power MOS 8T™ MOSFET
- Low on-state resistance (R<sub>DS(on)</sub>)
- Low input capacitance and Miller capacitance
- Low gate charge
- Avalanche energy rated
- High ruggedness
- ISOTOP package (SOT-227)
- Ultra-low stray inductance
- High integration density
Aplicaciones
Traducción por IA
- AC and DC motor control
- Switching power supplies
- Power factor correction
- Braking switches
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Componentes alternativos
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| IXFN80N50 | Littelfuse/IXYS | SOT-227B | 55 | $ 69.2077 | ||
| APT58M50JCU2 | MICROCHIP | SOT-227 | 0 | $ 94.4641 | ||
| APT58M50JU3 | MICROCHIP | SOT-227 | 0 | $ 83.6927 | ||
| APT58F50J | MICROCHIP | SOT-227B-4 | 0 | $ 88.6874 | ||
| APT58M50J | MICROCHIP | SOT-227B-4 | 0 | $ 98.4064 | ||
| STE88N65M5 | ST | ISOTOP | 0 | $ 39.1599 | ||
| IXFN90N170SK | Littelfuse/IXYS | SOT-227B | 0 | $ 368.3244 | ||
| APT50M50JLL | MICROCHIP | SOT-227B-4 | 0 | $ 138.9033 | ||
| APT80M60J | MICROCHIP | SOT-227B-4 | 0 | $ 151.8617 | ||
| APT80F60J | MICROCHIP | SOT-227B-4 | 0 | $ 164.275 |