MICROCHIP APT38F50J
| Manufacturer | |
| MPN | APT38F50J |
| LCSC Part # | C6506836 |
| Packaging | SOT-227B-4 |
| Customer # | |
| Key Attributes | 500V 38A 2.5V 355W 100mΩ@10V 1 N-channel SOT-227B-4 Single FETs, MOSFETs RoHS |
| Datasheet |  MICROCHIP APT38F50J |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | SOT-227B-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 38A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 355W | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.8nF | |
| Gate Charge(Qg) | 220nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | SOT-227B-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 38A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 355W | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.8nF | |
| Gate Charge(Qg) | 220nC@10V |
Introduction
Power MOS 8T™ is a high-speed, high-voltage N-channel switch-mode power MOSFET. This "FREDFET" version features an optimized drain-source (body) diode with reduced trr, soft recovery, and high recovery dv/dt capability, enabling high reliability in ZVS phase-shifted bridge and other topologies. Low gate charge, high transconductance, and a significantly reduced Crss/Ciss ratio provide excellent noise immunity and low switching losses. The inherent gate resistance and capacitance of the polysilicon gate structure help control di/dt during switching, enabling low EMI and reliable paralleling even at very high switching frequencies.
Features
- Fast switching, low EMI
- Low trr, high reliability
- Ultra-low Crss, enhanced noise immunity
- Low gate charge
- Avalanche energy rated
- RoHS compliant
Applications
- Zero-voltage switching (ZVS) phase-shifted and other full-bridge circuits
- Half-bridge circuits
- Power factor correction (PFC) and other boost converters
- Buck converters
- Single-switch and double-switch forward circuits
- Flyback circuits
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 72.2897 | $ 72.29 |
| 200+ | $ 28.8447 | $ 5768.94 |
| 500+ | $ 27.8808 | $ 13940.40 |
| 1,000+ | $ 27.405 | $ 27405.00 |
Standard Packaging1/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | SOT-227B-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 38A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 355W | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.8nF | |
| Gate Charge(Qg) | 220nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | SOT-227B-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 38A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 355W | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.8nF | |
| Gate Charge(Qg) | 220nC@10V |
Introduction
Power MOS 8T™ is a high-speed, high-voltage N-channel switch-mode power MOSFET. This "FREDFET" version features an optimized drain-source (body) diode with reduced trr, soft recovery, and high recovery dv/dt capability, enabling high reliability in ZVS phase-shifted bridge and other topologies. Low gate charge, high transconductance, and a significantly reduced Crss/Ciss ratio provide excellent noise immunity and low switching losses. The inherent gate resistance and capacitance of the polysilicon gate structure help control di/dt during switching, enabling low EMI and reliable paralleling even at very high switching frequencies.
Features
- Fast switching, low EMI
- Low trr, high reliability
- Ultra-low Crss, enhanced noise immunity
- Low gate charge
- Avalanche energy rated
- RoHS compliant
Applications
- Zero-voltage switching (ZVS) phase-shifted and other full-bridge circuits
- Half-bridge circuits
- Power factor correction (PFC) and other boost converters
- Buck converters
- Single-switch and double-switch forward circuits
- Flyback circuits
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| MS66N85IDF4 | MASPOWER | SOT-227 | 7 | $28.6455 $30.1531 | ||
| IXFN48N50 | Littelfuse/IXYS | SOT-227 | 7 | $ 31.7665 | ||
| APT38M50J | MICROCHIP | SOT-227B-4 | 0 | $ 75.9002 | ||
| APT5010JLLU2 | MICROCHIP | SOT-227 | 0 | $ 78.9185 | ||
| APT5010JLLU3 | MICROCHIP | SOT-227 | 0 | $ 82.8713 | ||
| APT39F60J | MICROCHIP | SOT-227B-4 | 0 | $ 82.5747 | ||
| IXFN38N100Q2 | Littelfuse/IXYS | SOT-227B | 0 | $15.2616 $38.154 | ||
| APT53F80J | MICROCHIP | SOT-227B-4 | 0 | $ 150.1282 | ||
| APT60M75JLL | MICROCHIP | SOT-227B-4 | 0 | $ 184.8776 | ||
| APT5010JVRU3 | MICROCHIP | SOT-227 | 0 | $ 95.2117 |