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MICROCHIP SST25VF040B-50-4I-QAF product image
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MICROCHIP SST25VF040B-50-4I-QAFRoHS

Manufacturer
MICROCHIP
MPN
SST25VF040B-50-4I-QAF
LCSC Part #
C637018
Packaging
WSON-8-EP(5x6)
Customer #
Key Attributes
SPI Serial Flash
Datasheetpdf iconMICROCHIP SST25VF040B-50-4I-QAF
In-Stock: 1
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QtyUnit PriceTotal Amount
1+$ 3.0129$ 3.01
10+$ 2.946$ 29.46
30+$ 2.9009$ 87.03
100+$ 2.8558$ 285.58
Standard Packaging98/Full Tube
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerMICROCHIP
PackagingWSON-8-EP(5x6)
Operating Temperature-40℃~+85℃
FeaturesWrite enable latch;Software write protection
Memory Size4Mbit
Voltage - Supply2.7V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency50MHz
Data Retention - TDR (Year)100 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)-
Page Programming Time (Tpp)-
Standby Supply Current5uA
InterfaceSPI
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Introduction

AI Translation

The 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF040B devices are enhanced with improved operating frequency and even lower power consumption. SST25VF040B SPI serial Flash memories are manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. SST25VF040B devices significantly improve performance and reliability, while lowering power consumption. The devices write (Program or Erase) with a single power supply of 2.7V - 3.6V for SST25VF040B. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any erase or program operation is less than alternative Flash memory technologies.

Features

AI Translation
  • Single Voltage Read and Write Operations: - 2.7V - 3.6V
  • Serial Interface Architecture: - SPI Compatible: Mode 0 and Mode 3
  • High-Speed Clock Frequency: - Up to 50 MHz
  • Superior Reliability: - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention
  • Low-Power Consumption: - Active Read Current: 10 mA (typical) - Standby Current: 5 µA (typical)
  • Flexible Erase Capability: - Uniform 4-Kbyte sectors - Uniform 32-Kbyte overlay blocks - Uniform 64-Kbyte overlay blocks
  • Fast Erase and Byte Program: - Chip Erase Time: 35 ms (typical) - Sector/Block Erase Time: 18 ms (typical) - Byte Program Time: 7 µs (typical)
  • Auto Address Increment (AAI) Programming: - Decrease total chip programming time over Byte Program operations
  • End of Write Detection: - Software polling the BUSY bit in STATUS Register - Busy Status readout on SO pin in AAI Mode
  • Hold Pin (HOLD#): - Suspends a serial sequence to the memory without deselecting the device
  • Write Protection (WP#): - Enables/Disables the Lock-Down function o the STATUS register
  • Software Write Protection: - Write protection through Block Protection bits in STATUS register
  • Temperature Range: - Commercial: 0℃ to +70℃ - Industrial: -40℃ to +85℃
  • All devices are RoHS compliant