MICROCHIP VN10KN3-G-P013
| Produttore | |
| Cod. Prod. | VN10KN3-G-P013 |
| Cod. LCSC | C629218 |
| Imballo | TO-92-3 |
| Numero Cliente | |
| Attr. chiave | 60V 310mA 2.5V 1W 5Ω@10V 1 N-channel TO-92-3 Single FETs, MOSFETs RoHS |
| Scheda Tecnica |  MICROCHIP VN10KN3-G-P013 |
| Conformità RoHS | 2 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MICROCHIP | |
| Imballo | TO-92-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 310mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1W | |
| RDS(on) | 5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 60pF |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MICROCHIP | |
| Imballo | TO-92-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 310mA |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1W | |
| RDS(on) | 5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 60pF |
Descrizione
The VN10K enhancement-mode (normally-off) transistor employs a vertical double-diffused metal-oxide-semiconductor (DMOS) structure combined with a mature silicon-gate fabrication process. This combination gives the device the power-handling capability of a bipolar transistor along with the high input impedance and positive temperature coefficient inherent to MOS devices. As is characteristic of all MOS structures, the device is immune to thermal runaway and thermally induced second breakdown.
Microchip's vertical DMOS FETs are ideally suited for a wide range of switching and amplification applications requiring very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speed.
Caratteristiche
- No secondary breakdown
- Low power drive requirements
- Easy paralleling
- Low input capacitance (CISS) and fast switching speed
- Excellent thermal stability
- Integrated source-drain diode
- High input impedance and high gain
Applicazioni
- Motor control
- Converters
- Amplifiers
- Switches
- Power supply circuits
- Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.5881 | $ 0.59 |
| 200+ | $ 0.2285 | $ 45.70 |
| 500+ | $ 0.2208 | $ 110.40 |
| 1,000+ | $ 0.2161 | $ 216.10 |
Package Standard2000/Full Bag | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MICROCHIP | |
| Imballo | TO-92-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 310mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1W | |
| RDS(on) | 5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 60pF |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MICROCHIP | |
| Imballo | TO-92-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 310mA |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1W | |
| RDS(on) | 5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 60pF |
Descrizione
The VN10K enhancement-mode (normally-off) transistor employs a vertical double-diffused metal-oxide-semiconductor (DMOS) structure combined with a mature silicon-gate fabrication process. This combination gives the device the power-handling capability of a bipolar transistor along with the high input impedance and positive temperature coefficient inherent to MOS devices. As is characteristic of all MOS structures, the device is immune to thermal runaway and thermally induced second breakdown.
Microchip's vertical DMOS FETs are ideally suited for a wide range of switching and amplification applications requiring very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speed.
Caratteristiche
- No secondary breakdown
- Low power drive requirements
- Easy paralleling
- Low input capacitance (CISS) and fast switching speed
- Excellent thermal stability
- Integrated source-drain diode
- High input impedance and high gain
Applicazioni
- Motor control
- Converters
- Amplifiers
- Switches
- Power supply circuits
- Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
C629218 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Confezione | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| VN10KN3-G | MICROCHIP | TO-92-3 | 4 | $ 1.5402 | ||
| VN2222LL-G | MICROCHIP | TO-92 | 34 | $ 0.7809 | ||
| VN10KN3-G-P002 | MICROCHIP | TO-92-3 | 0 | $ 0.5881 | ||
| VN10KN3-G-P003 | MICROCHIP | TO-92 | 0 | $ 0.5881 | ||
| VN10KN3-G-P014 | MICROCHIP | TO-92 | 0 | $ 0.5881 | ||
| VN0106N3-G | MICROCHIP | TO-92-3 | 0 | $ 1.5581 | ||
| TN0106N3-G | MICROCHIP | TO-92-3 | 0 | $ 0.6494 | ||
| TN0106N3-G-P003 | MICROCHIP | TO-92-3 | 0 | $ 0.9678 | ||
| TN0106N3-G-P013 | MICROCHIP | TO-92-3 | 0 | $ 0.9678 | ||
| TN0110N3-G | MICROCHIP | TO-92-3 | 0 | $ 3.6018 |