Littelfuse IXTY02N120P
| Manufacturer | |
| MPN | IXTY02N120P |
| LCSC Part # | C6069436 |
| Packaging | TO-252AA |
| Customer # | |
| Key Attributes | 33W 1.2kV 200mA 4V 75Ω@10V 1 N-channel N-Channel TO-252AA Single FETs, MOSFETs RoHS |
| Datasheet | |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Littelfuse | |
| Packaging | TO-252AA | |
| Output Capacitance(Coss) | 8.6pF | |
| Pd - Power Dissipation | 33W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 1.2kV | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 200mA | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| RDS(on) | 75Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.9pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 104pF | |
| Gate Charge(Qg) | 4.7nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Littelfuse | |
| Packaging | TO-252AA | |
| Output Capacitance(Coss) | 8.6pF | |
| Pd - Power Dissipation | 33W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 1.2kV | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 200mA |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| RDS(on) | 75Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.9pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 104pF | |
| Gate Charge(Qg) | 4.7nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
This N-channel enhancement-mode power MOSFET is manufactured using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically designed to reduce on-resistance while delivering superior switching performance and high avalanche energy ruggedness. These devices are suitable for switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
- International Standard Packages
- Low Q
- Avalanche Rated
- Low Package Inductance
- Fast Intrinsic Rectifier
- High Power Density
- Easy to Mount
- Space Savings
Applications
- DC-DC Converters
- Switch-Mode and Resonant-Mode Power Supplies
- AC and DC Motor Drives
- Laser Drivers Igniters, RF Generators
- Robotics and Servo Controls
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 2.7879 | $ 2.79 |
| 10+ | $ 2.7505 | $ 27.51 |
| 30+ | $ 2.7262 | $ 81.79 |
| 70+ | $ 2.7018 | $ 189.13 |
Standard Packaging70/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Littelfuse | |
| Packaging | TO-252AA | |
| Output Capacitance(Coss) | 8.6pF | |
| Pd - Power Dissipation | 33W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 1.2kV | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 200mA | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| RDS(on) | 75Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.9pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 104pF | |
| Gate Charge(Qg) | 4.7nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Littelfuse | |
| Packaging | TO-252AA | |
| Output Capacitance(Coss) | 8.6pF | |
| Pd - Power Dissipation | 33W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 1.2kV | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 200mA |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| RDS(on) | 75Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.9pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 104pF | |
| Gate Charge(Qg) | 4.7nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
This N-channel enhancement-mode power MOSFET is manufactured using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically designed to reduce on-resistance while delivering superior switching performance and high avalanche energy ruggedness. These devices are suitable for switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
- International Standard Packages
- Low Q
- Avalanche Rated
- Low Package Inductance
- Fast Intrinsic Rectifier
- High Power Density
- Easy to Mount
- Space Savings
Applications
- DC-DC Converters
- Switch-Mode and Resonant-Mode Power Supplies
- AC and DC Motor Drives
- Laser Drivers Igniters, RF Generators
- Robotics and Servo Controls
C6069436 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IXTY02N120P | Littelfuse/IXYS | TO-252 | 18 | $ 2.8259 | ||
| LJ2N120D | luJing | TO-252 | 1,323 | $ 0.5329 | ||
| IXTY1R4N120P | Littelfuse/IXYS | TO-252AA | 10 | $ 6.122 | ||
| CMD3N120 | Cmos | TO-252 | 316 | $0.6158 $0.6482 | ||
| 3N120 | TECH PUBLIC | TO-252 | 1,873 | $ 0.7004 | ||
| IXTY02N120P-TRL | Littelfuse/IXYS | TO-252AA | 0 | $ 1.2221 | ||
| IXTY1R4N120PHV | Littelfuse/IXYS | TO-252AA | 0 | $ 2.3053 | ||
| IXTY1N120PTRL | Littelfuse/IXYS | TO-252AA | 0 | $ 2.654 | ||
| IXTY1R4N120P-TRL | Littelfuse/IXYS | TO-252AA | 0 | $ 2.3053 | ||
| KND42120A | KIA Semicon Tech | TO-252 | 0 | $ 0.5828 |



