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onsemi FDMS86500L
| Manufacturer | |
| MPN | FDMS86500L |
| LCSC Part # | C606113 |
| Packaging | PQFN-8(5x6) |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 158A DFN-8(4.9x5.8) |
| Datasheet |  onsemi FDMS86500L |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PQFN-8(5x6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 158A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 104W | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 2.1mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.42nF | |
| Gate Charge(Qg) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PQFN-8(5x6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 158A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 104W | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 2.1mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.42nF | |
| Gate Charge(Qg) | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This N−Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Features
AI Translation
- Max rDS(on)=2.5 mΩ at VGS=10 V, ID=25 A
- Max rDS(on)=3.7 mΩ at VGS=4.5 V, ID=20 A
- Advanced Package and Silicon combination for low rDS(on) and high efficiency
- Next generation enhanced body diode technology, engineered for soft recovery
- MSL1 robust package design
- 100% UIL tested
- RoHS Compliant
Applications
AI Translation
- Primary Switch in Isolated DC−DC
- Synchronous Rectifier
- Load Switch
In-Stock: 215
215 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.4018 | $ 1.40 |
| 10+ | $ 1.1782 | $ 11.78 |
| 30+ | $ 1.0558 | $ 31.67 |
| 100+ | $ 0.8355 | $ 83.55 |
| 500+ | $ 0.7751 | $ 387.55 |
| 1,000+ | $ 0.7474 | $ 747.40 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PQFN-8(5x6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 158A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 104W | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 2.1mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.42nF | |
| Gate Charge(Qg) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PQFN-8(5x6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 158A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 104W | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 2.1mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.42nF | |
| Gate Charge(Qg) | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This N−Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Features
AI Translation
- Max rDS(on)=2.5 mΩ at VGS=10 V, ID=25 A
- Max rDS(on)=3.7 mΩ at VGS=4.5 V, ID=20 A
- Advanced Package and Silicon combination for low rDS(on) and high efficiency
- Next generation enhanced body diode technology, engineered for soft recovery
- MSL1 robust package design
- 100% UIL tested
- RoHS Compliant
Applications
AI Translation
- Primary Switch in Isolated DC−DC
- Synchronous Rectifier
- Load Switch
C606113 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| E060N2P3HL1 | Existar | PDFN5x6-8 | 791 | $0.6112 $0.764 |