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onsemi FDMS86500LRoHS

Manufacturer
onsemi
MPN
FDMS86500L
LCSC Part #
C606113
Packaging
PQFN-8(5x6)
Customer #
Key Attributes
MOSFET N-CH 60V 158A DFN-8(4.9x5.8)
Datasheetpdf icononsemi FDMS86500L
In-Stock: 72
72 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.5355$ 1.54
10+$ 1.2906$ 12.91
30+$ 1.1561$ 34.68
100+$ 0.9159$ 91.59
500+$ 0.8486$ 424.30
1,000+$ 0.8182$ 818.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingPQFN-8(5x6)
Drain to Source Voltage60V
Current - Continuous Drain(Id)158A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)2.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.42nF
Gate Charge(Qg)-
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This N−Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Features

AI Translation
  • Max rDS(on)=2.5 mΩ at VGS=10 V, ID=25 A
  • Max rDS(on)=3.7 mΩ at VGS=4.5 V, ID=20 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • Next generation enhanced body diode technology, engineered for soft recovery
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

Applications

AI Translation
  • Primary Switch in Isolated DC−DC
  • Synchronous Rectifier
  • Load Switch