onsemi FDU3N50NZTU
| Manufacturer | |
| MPN | FDU3N50NZTU |
| LCSC Part # | C605064 |
| Packaging | TO-251-3 |
| Customer # | |
| Key Attributes | 500V 2.5A 5V 40W 2.1Ω@10V 1 N-channel TO-251-3 Single FETs, MOSFETs |
| Datasheet |  onsemi FDU3N50NZTU |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-251-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 2.5A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 280pF | |
| Gate Charge(Qg) | 8nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-251-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 2.5A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 280pF | |
| Gate Charge(Qg) | 8nC@10V |
Introduction
UniFET II MOSFETs are a high-voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family offers the lowest on-resistance among planar MOSFETs, along with superior switching performance and higher avalanche energy ratings. In addition, the integrated gate-source ESD diode enables UniFET II MOSFETs to withstand HBM surge stress exceeding 2kV. This device family is suited for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.
Features
- R DS(on) = 2.1 Ω (typical) at V GS = 10 V, I D = 1.25 A
- Low gate charge (6.2 nC typical)
- Low C rss (2.5 pF typical)
- 100% avalanche tested
- Improved dv/dt capability
- Improved ESD capability
- Lead-free and RoHS compliant
Applications
- LCD/LED TV - Lighting - Charger/Adapter
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.3418 | $ 0.34 |
| 10+ | $ 0.2703 | $ 2.70 |
| 30+ | $ 0.2396 | $ 7.19 |
| 100+ | $ 0.2014 | $ 20.14 |
| 500+ | $ 0.1843 | $ 92.15 |
| 1,000+ | $ 0.1741 | $ 174.10 |
Standard Packaging5040/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-251-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 2.5A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 280pF | |
| Gate Charge(Qg) | 8nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-251-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 2.5A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 280pF | |
| Gate Charge(Qg) | 8nC@10V |
Introduction
UniFET II MOSFETs are a high-voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family offers the lowest on-resistance among planar MOSFETs, along with superior switching performance and higher avalanche energy ratings. In addition, the integrated gate-source ESD diode enables UniFET II MOSFETs to withstand HBM surge stress exceeding 2kV. This device family is suited for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.
Features
- R DS(on) = 2.1 Ω (typical) at V GS = 10 V, I D = 1.25 A
- Low gate charge (6.2 nC typical)
- Low C rss (2.5 pF typical)
- 100% avalanche tested
- Improved dv/dt capability
- Improved ESD capability
- Lead-free and RoHS compliant
Applications
- LCD/LED TV - Lighting - Charger/Adapter
C605064 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| NCE65T1K2I | NCE | TO-251 | 10 | $ 0.4256 | ||
| IPU60R2K1CEAKMA1 | Infineon | TO-251-3 | 28 | $ 0.3152 | ||
| IPU60R2K1CE | Infineon | TO-251 | 1,014 | $ 0.4111 | ||
| TSM60NC1R5CH C5G | Taiwan Semiconductor | TO-251(IPAK) | 0 | $ 0.412 | ||
| FQU4N50TU-WS | onsemi | TO-251-3 | 0 | $ 0.5302 | ||
| DMJ70H1D4SJ3 | DIODES | TO-251 | 0 | $ 2.9625 | ||
| IPSA70R2K0CE | Infineon | TO-251-3 | 0 | $ 0.5557 | ||
| NCE70T1K2I | NCE | TO-251 | 0 | $ 0.4288 | ||
| IPS60R2K1CE | Infineon | TO-251-3 | 0 | $ 0.4693 | ||
| TSM60N1R4CH C5G | Taiwan Semiconductor | TO-251(IPAK) | 0 | $ 2.0246 |