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EDA ModelsEasyEDA
onsemi FDMA530PZ
| Manufacturer | |
| MPN | FDMA530PZ |
| LCSC Part # | C605027 |
| Packaging | DFN-6-EP(2x2) |
| Customer # | |
| Key Attributes | MOSFET 30V 6.8A DFN-6-EP(2x2) |
| Datasheet |  onsemi FDMA530PZ |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | DFN-6-EP(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 6.8A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 2.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 195pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.07nF | |
| Gate Charge(Qg) | 24nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | DFN-6-EP(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 6.8A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 195pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.07nF | |
| Gate Charge(Qg) | 24nC@10V | |
| Type | P-Channel |
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Introduction
AI Translation
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on−state resistance. The WDFN6 (MicroFET 2×2.) package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
AI Translation
- Max rDS(on)=35 mΩ at VGS=−10 Vz, ID=−6.8 A
- Max rDS(on)=65 mΩ at VGS=−4.5 V, ID=−5.0 A
- Low Profile - 0.8 mm Maximum - in the New Package WDFN6 (MicroFET 2×2 mm)
- HBM ESD Protection Level >3 kV Typical
- Free from Halogenated Compounds and Antimony Oxides
- RoHS Compliant
Applications
AI Translation
- cellular handset
- other ultraportable applications
- linear mode applications
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Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.9098 | $ 0.91 |
| 10+ | $ 0.8985 | $ 8.99 |
| 30+ | $ 0.8903 | $ 26.71 |
| 100+ | $ 0.8822 | $ 88.22 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | DFN-6-EP(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 6.8A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 2.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 195pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.07nF | |
| Gate Charge(Qg) | 24nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | DFN-6-EP(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 6.8A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 195pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.07nF | |
| Gate Charge(Qg) | 24nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on−state resistance. The WDFN6 (MicroFET 2×2.) package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
AI Translation
- Max rDS(on)=35 mΩ at VGS=−10 Vz, ID=−6.8 A
- Max rDS(on)=65 mΩ at VGS=−4.5 V, ID=−5.0 A
- Low Profile - 0.8 mm Maximum - in the New Package WDFN6 (MicroFET 2×2 mm)
- HBM ESD Protection Level >3 kV Typical
- Free from Halogenated Compounds and Antimony Oxides
- RoHS Compliant
Applications
AI Translation
- cellular handset
- other ultraportable applications
- linear mode applications
C605027 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |